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Stanowisko: Profesor Telefon: +48 32 603 4167 Email:Marian.Nowak@polsl.pl Adres: ul. Krasińskiego 8, p.161 PL-40-019 Katowice |
Zainteresowania naukowe:
- Sonochemiczne wytwarzanie nanomateriałów (np. SbSI, SbSeI, SbSxSe1-x).
- Produkcja monokryształów, polikryształów i nanokryształów fotoferroelektryków (np. SbSI, SbSeI, SbSxSe1-xI, SbI3),
- Wytwarzanie materiałów optycznie nieliniowych (np. SbI3.3S8).
- Wytwarzanie opali, opali wypełniony fotoferroelektrykami oraz odwrotnych opali fotoferroelektrycznych (np. odwrotnych opali SbSI).
- Laserowa obróbka półprzewodników (np. laserowe wytwarzanie heterostruktur SbSI/Sb2S3 i podwójnych heterostruktur SbSI/Sb2S3/SbSI).
- Obliczanie rozkładu natężenia światła oraz koncentracji fotogenerowanych nośników ładunku elektrycznego w układach z wnęka optyczną.
- Wyznaczanie parametrów półprzewodników w różnych temperaturach, różnych polach elektrycznych i magnetycznych, przy różnym oświetleniu oraz w różnych atmosferach z wykorzystaniem zjawisk:
- optycznych (transmisja i odbicie zwierciadlane oraz dyfuzyjne, fotoodbicie),
- elektrycznych (stałoprądowe przewodnictwo elektryczne oraz spektroskopia impedancji),
- fotoelektrycznych (stałoprądowe i zmiennoprądowe fotoprzewodnictwo elektryczne, efekt fotowoltaiczny),
- magnetoelektrycznych (magnetoopór, efekt Halla oraz fotohalla),
- fotomagnetoelektrycznych (metody kontaktowe i bezkontaktowe).
- Badania fotoferroelektryków (np. SbSI),
- Badania elektryczne i optyczne nanomateriałów:
- półprzewodnikowych i ferroelektrycznych nanodrutów (e.g. SbSI, SbSeI,
SbSxSe1-xI), - nanorurek węglowych wypełnionych fotoferroelektrycznymi nanodrutami (np. SbSI@CNT, SbSeI@CNT),
- grafenu.
- półprzewodnikowych i ferroelektrycznych nanodrutów (e.g. SbSI, SbSeI,
- Nanosensory gazów i nanofotodetektory.
- Produkcja materiałów optycznie nieliniowych (np. SbI3.3S8).
- Wytwarzanie i badanie własności brązu o dużej zawartości cyny.
Publikacje:
2019 |
Mistewicz, K; Jesionek, M; Nowak, M; Kozioł, M SbSeI pyroelectric nanogenerator for a low temperature waste heat recovery Journal Article Nano Energy, 64 , pp. 103906, 2019, ISSN: 2211-2855. @article{MISTEWICZ2019103906, title = {SbSeI pyroelectric nanogenerator for a low temperature waste heat recovery}, author = {K. Mistewicz and M. Jesionek and M. Nowak and M. Kozioł}, url = {http://www.sciencedirect.com/science/article/pii/S2211285519306135}, doi = {https://doi.org/10.1016/j.nanoen.2019.103906}, issn = {2211-2855}, year = {2019}, date = {2019-01-01}, journal = {Nano Energy}, volume = {64}, pages = {103906}, abstract = {The low-grade waste heat, which constitutes majority of the total waste heat produced in industrial sector, is very difficult to be recovered. Pyroelectric materials have recently received a great attention for harvesting waste heat due to their ability to convert temperature fluctuations into an electrical energy. A simple, scalable and cheap fabrication method of pyroelectric nanogenerator (PENG) based on antimony selenoiodide (SbSeI) is presented for the first time. It involves a sonochemical synthesis of SbSeI nanowires and their high pressure (100 MPa) compression at room temperature into a bulk sample. Fabricated device has been subjected to thermal fluctuations, thereby generating an electric signal which has been highly correlated to the thermal input. SbSeI PENG has generated electric output up to 11 nA with power density of 0.59(4) μW/m2 upon exposure to heat-cool condition for a temperature variation from 324 K to 334 K. Presented paper reports also the temperature dependences of electric conductance and pyroelectric coefficient of compressed SbSeI nanowires, which has reached the maximum value of 44(5) nC/(cm2K) at 327 K.}, keywords = {}, pubstate = {published}, tppubtype = {article} } The low-grade waste heat, which constitutes majority of the total waste heat produced in industrial sector, is very difficult to be recovered. Pyroelectric materials have recently received a great attention for harvesting waste heat due to their ability to convert temperature fluctuations into an electrical energy. A simple, scalable and cheap fabrication method of pyroelectric nanogenerator (PENG) based on antimony selenoiodide (SbSeI) is presented for the first time. It involves a sonochemical synthesis of SbSeI nanowires and their high pressure (100 MPa) compression at room temperature into a bulk sample. Fabricated device has been subjected to thermal fluctuations, thereby generating an electric signal which has been highly correlated to the thermal input. SbSeI PENG has generated electric output up to 11 nA with power density of 0.59(4) μW/m2 upon exposure to heat-cool condition for a temperature variation from 324 K to 334 K. Presented paper reports also the temperature dependences of electric conductance and pyroelectric coefficient of compressed SbSeI nanowires, which has reached the maximum value of 44(5) nC/(cm2K) at 327 K. |
Jesionek, M; Toroń, B; Szperlich, P; Biniaś, W; Biniaś, D; Rabiej, S; Starczewska, A; Nowak, M; Kępińska, M; Dec, J Fabrication of a new PVDF/SbSI nanowire composite for smart wearable textile Journal Article Polymer, 180 , pp. 121729, 2019, ISSN: 0032-3861. @article{JESIONEK2019121729, title = {Fabrication of a new PVDF/SbSI nanowire composite for smart wearable textile}, author = {M. Jesionek and B. Toroń and P. Szperlich and W. Biniaś and D. Biniaś and S. Rabiej and A. Starczewska and M. Nowak and M. Kępińska and J. Dec}, url = {http://www.sciencedirect.com/science/article/pii/S0032386119307359}, doi = {https://doi.org/10.1016/j.polymer.2019.121729}, issn = {0032-3861}, year = {2019}, date = {2019-01-01}, journal = {Polymer}, volume = {180}, pages = {121729}, abstract = {In this paper, a new fabrication method for Polyvinylidene fluoride/SbSI nanowire composite is presented. Polyvinylidene fluoride (PVDF) is a specialist thermoplastic fluoropolymer with very good mechanical, chemical and thermal properties. Additionally, PVDF shows piezoelectric, pyroelectric, and ferroelectric properties. Antimony sulfoiodide (SbSI) nanowires (lateral dimensions of 10 nm–100 nm and lengths up to a few micrometres) are also piezoelectric compound with one of the best electromechanical and piezoelectric coefficient (k33 = 0.9 and dV = 0.9 × 10−9 C/N). SbSI nanowires have been added to improve piezoelectric properties of PVDF. The prepared SbSI nanowires were bound with PVDF in a mass ratio of 15:85, which was the fibre formation input with the addition of SbSI nanowires at different take-up velocities. An active layer of nanogenerator was prepared from the fabricated PVDF/SbSI nanowire composite. The preliminary investigations of compression and vibrations, allowed for the determination of the composites open circuit voltage 1.2 Vp-p and 2.5 Vp-p, respectively. Generated powers under impact have reached values PS = 408.8(52) μW/cm2 and PV = 3.464(53) mW/cm3, respectively.}, keywords = {}, pubstate = {published}, tppubtype = {article} } In this paper, a new fabrication method for Polyvinylidene fluoride/SbSI nanowire composite is presented. Polyvinylidene fluoride (PVDF) is a specialist thermoplastic fluoropolymer with very good mechanical, chemical and thermal properties. Additionally, PVDF shows piezoelectric, pyroelectric, and ferroelectric properties. Antimony sulfoiodide (SbSI) nanowires (lateral dimensions of 10 nm–100 nm and lengths up to a few micrometres) are also piezoelectric compound with one of the best electromechanical and piezoelectric coefficient (k33 = 0.9 and dV = 0.9 × 10−9 C/N). SbSI nanowires have been added to improve piezoelectric properties of PVDF. The prepared SbSI nanowires were bound with PVDF in a mass ratio of 15:85, which was the fibre formation input with the addition of SbSI nanowires at different take-up velocities. An active layer of nanogenerator was prepared from the fabricated PVDF/SbSI nanowire composite. The preliminary investigations of compression and vibrations, allowed for the determination of the composites open circuit voltage 1.2 Vp-p and 2.5 Vp-p, respectively. Generated powers under impact have reached values PS = 408.8(52) μW/cm2 and PV = 3.464(53) mW/cm3, respectively. |
2018 |
Jesionek, M; Nowak, M; Mistewicz, K; Kępińska, M; Stróż, D; Bednarczyk, I; Paszkiewicz, R Sonochemical growth of nanomaterials in carbon nanotube Journal Article Ultrasonics, 83 , pp. 179 - 187, 2018, ISSN: 0041-624X, (Ultrasonic advances applied to materials science). @article{JESIONEK2018179, title = {Sonochemical growth of nanomaterials in carbon nanotube}, author = {M. Jesionek and M. Nowak and K. Mistewicz and M. Kępińska and D. Stróż and I. Bednarczyk and R. Paszkiewicz}, url = {http://www.sciencedirect.com/science/article/pii/S0041624X16303936}, doi = {https://doi.org/10.1016/j.ultras.2017.03.014}, issn = {0041-624X}, year = {2018}, date = {2018-01-01}, journal = {Ultrasonics}, volume = {83}, pages = {179 - 187}, abstract = {Recent achievements in investigations of carbon nanotubes (CNTs) filled with ternary chalcohalides (antimony sulfoiodide (SbSI) and antimony selenoiodide (SbSeI)) are presented. Parameters of sonochemical encapsulation of nanocrystalline semiconducting ferroelectric SbSI-type materials in CNTs are reported. This low temperature technology is convenient, fast, efficient and environmentally friendly route for producing novel type of hybrid materials useful for nanodevices. Structure as well as optical and electrical properties of SbSI@CNTs and SbSeI@CNTs are described. Advantages of ultrasonic joining of such filled CNTs with metal microelectrodes are emphasized. The possible applications of these nanomaterials as gas sensors are shown.}, note = {Ultrasonic advances applied to materials science}, keywords = {}, pubstate = {published}, tppubtype = {article} } Recent achievements in investigations of carbon nanotubes (CNTs) filled with ternary chalcohalides (antimony sulfoiodide (SbSI) and antimony selenoiodide (SbSeI)) are presented. Parameters of sonochemical encapsulation of nanocrystalline semiconducting ferroelectric SbSI-type materials in CNTs are reported. This low temperature technology is convenient, fast, efficient and environmentally friendly route for producing novel type of hybrid materials useful for nanodevices. Structure as well as optical and electrical properties of SbSI@CNTs and SbSeI@CNTs are described. Advantages of ultrasonic joining of such filled CNTs with metal microelectrodes are emphasized. The possible applications of these nanomaterials as gas sensors are shown. |
Nowak, M; Jesionek, M; Solecka, B; Szperlich, P; Duka, P; Starczewska, A Contactless photomagnetoelectric investigations of 2D semiconductors Journal Article Beilstein Journal of Nanotechnology, 9 , pp. 2741-2749, 2018, ISSN: 2190-4286. @article{Nowak2018, title = {Contactless photomagnetoelectric investigations of 2D semiconductors}, author = {M. Nowak and M. Jesionek and B. Solecka and P. Szperlich and P. Duka and A. Starczewska}, url = {https://www.beilstein-journals.org/bjnano/articles/9/256}, doi = {10.3762/bjnano.9.256}, issn = {2190-4286}, year = {2018}, date = {2018-01-01}, journal = {Beilstein Journal of Nanotechnology}, volume = {9}, pages = {2741-2749}, abstract = {Background: Applications of two-dimensional (2D) materials in electronic devices require the development of appropriate measuring methods for determining their typical semiconductor parameters, i.e., mobility and carrier lifetime. Among these methods, contactless techniques and mobility extraction methods based on field-effect measurements are of great importance. Results: Here we show a contactless method for determining these parameters in 2D semiconductors that is based on the photomagnetoelectric (PME) effect (also known as the photoelectromagnetic effect). We present calculated dependences of the PME magnetic moment, evoked in 2D Corbino configuration, on the magnetic field as well as on the intensity and spatial distribution of illumination. The theoretical predictions agree with the results of the contactless investigations performed on non-suspended single-layer graphene. We use the contactless PME method for determining the dependence of carrier mobility on the concentration of electrons and holes induced by a back-gate voltage. Conclusion: The presented contactless PME method, used in Corbino geometry, is complementary to the mobility extraction methods based on field-effect measurements. It can be used for determining the mobility and diffusion length of carriers in different 2D materials. Keywords: carrier mobility; contactless investigations; graphene; photomagnetoelectric effect; 2D materials}, keywords = {}, pubstate = {published}, tppubtype = {article} } Background: Applications of two-dimensional (2D) materials in electronic devices require the development of appropriate measuring methods for determining their typical semiconductor parameters, i.e., mobility and carrier lifetime. Among these methods, contactless techniques and mobility extraction methods based on field-effect measurements are of great importance. Results: Here we show a contactless method for determining these parameters in 2D semiconductors that is based on the photomagnetoelectric (PME) effect (also known as the photoelectromagnetic effect). We present calculated dependences of the PME magnetic moment, evoked in 2D Corbino configuration, on the magnetic field as well as on the intensity and spatial distribution of illumination. The theoretical predictions agree with the results of the contactless investigations performed on non-suspended single-layer graphene. We use the contactless PME method for determining the dependence of carrier mobility on the concentration of electrons and holes induced by a back-gate voltage. Conclusion: The presented contactless PME method, used in Corbino geometry, is complementary to the mobility extraction methods based on field-effect measurements. It can be used for determining the mobility and diffusion length of carriers in different 2D materials. Keywords: carrier mobility; contactless investigations; graphene; photomagnetoelectric effect; 2D materials |
2016 |
Mistewicz, K; Nowak, M; Starczewska, A; Jesionek, M; Rzychoń, T; Wrzalik, R; Guiseppi-Elie, A Determination of electrical conductivity type of SbSI nanowires Journal Article Materials Letters, 182 , pp. 78 - 80, 2016, ISSN: 0167-577X. @article{Mistewicz201678, title = {Determination of electrical conductivity type of SbSI nanowires}, author = {K. Mistewicz and M. Nowak and A. Starczewska and M. Jesionek and T. Rzychoń and R. Wrzalik and A. Guiseppi-Elie}, url = {//www.sciencedirect.com/science/article/pii/S0167577X16310291}, doi = {http://dx.doi.org/10.1016/j.matlet.2016.06.073}, issn = {0167-577X}, year = {2016}, date = {2016-01-01}, journal = {Materials Letters}, volume = {182}, pages = {78 - 80}, abstract = {Abstract This paper presents for the first time qualitatively different DC electrical responses of antimony sulfoiodide (SbSI) nanowires on hydrogen and oxygen. The effect produced by adsorbed gas on the electrical conductance can be used for determination of electrical conductivity type of investigated nanomaterials. Electrical conductance of the SbSI nanowires increases due to adsorption of O2 molecules (known as electron acceptors) and decreases due to adsorption of H2 molecules (known as electron donors). Such behavior proves the p-type electrical conductivity of investigated SbSI nanowires.}, keywords = {}, pubstate = {published}, tppubtype = {article} } Abstract This paper presents for the first time qualitatively different DC electrical responses of antimony sulfoiodide (SbSI) nanowires on hydrogen and oxygen. The effect produced by adsorbed gas on the electrical conductance can be used for determination of electrical conductivity type of investigated nanomaterials. Electrical conductance of the SbSI nanowires increases due to adsorption of O2 molecules (known as electron acceptors) and decreases due to adsorption of H2 molecules (known as electron donors). Such behavior proves the p-type electrical conductivity of investigated SbSI nanowires. |
2015 |
Nowak, M; Solecka, B; Jesionek, M Determination of Diffusion Length of Carriers in Graphene Using Contactless Photoelectromagnetic Method of Investigations Inproceedings Symposium K – Graphene and Graphene Nanocomposites, Mater. Res. Soc. Symp. Proc., 2015. @inproceedings{OPL:9552515, title = {Determination of Diffusion Length of Carriers in Graphene Using Contactless Photoelectromagnetic Method of Investigations}, author = {M. Nowak and B. Solecka and M. Jesionek}, url = {http://journals.cambridge.org/article_S1946427415000688}, doi = {10.1557/opl.2015.68}, year = {2015}, date = {2015-01-01}, booktitle = {Symposium K – Graphene and Graphene Nanocomposites}, volume = {1727}, publisher = {Mater. Res. Soc. Symp. Proc.}, series = {MRS Proceedings}, abstract = {The photoelectromagnetic (PEM) investigations are proposed for determination of diffusion length of carriers in graphene. The presented measurements are performed in Corbino configuration using noncontact technique. The circular PEM currents are detected in an outer coil by induction if illumination intensity is periodically varied. The theoretical dependence of PEM response on magnetic field induction, intensity and spatial distribution of illumination as well as on frequency of illumination chopping is presented. Experimental PEM data are presented for graphene films grown by CVD processing on a cooper foil and transferred onto a glass substrate. The presented method of investigations should be essential for development of graphene electronic and optoelectronic devices.}, keywords = {}, pubstate = {published}, tppubtype = {inproceedings} } The photoelectromagnetic (PEM) investigations are proposed for determination of diffusion length of carriers in graphene. The presented measurements are performed in Corbino configuration using noncontact technique. The circular PEM currents are detected in an outer coil by induction if illumination intensity is periodically varied. The theoretical dependence of PEM response on magnetic field induction, intensity and spatial distribution of illumination as well as on frequency of illumination chopping is presented. Experimental PEM data are presented for graphene films grown by CVD processing on a cooper foil and transferred onto a glass substrate. The presented method of investigations should be essential for development of graphene electronic and optoelectronic devices. |
2014 |
Nowak, M; Solecka, B; Jesionek, M Photoelectromagnetic Investigations of Graphene Journal Article Acta Physica Polonica A, 126 (5), pp. 1104-1106, 2014. @article{nowak2014photoelectromagnetic, title = {Photoelectromagnetic Investigations of Graphene}, author = {M. Nowak and B. Solecka and M. Jesionek}, url = {http://przyrbwn.icm.edu.pl/APP/PDF/126/a126z5p13.pdf}, doi = {10.12693/APhysPolA.126.1104}, year = {2014}, date = {2014-11-01}, journal = {Acta Physica Polonica A}, volume = {126}, number = {5}, pages = {1104-1106}, publisher = {Institute of Physics, Polish Academy of Science}, abstract = {The photoelectromagnetic investigations of graphene has been performed using noncontact technique. The dependence of photoelectromagnetic response on magnetic field induction, illumination intensity for different photon energies, and frequency of illumination chopping is presented. We anticipate our paper to be a starting point for investigations of carrier diffusion length in this material. Such investigations should be essential for development of graphene electronic and optoelectronic devices.}, keywords = {}, pubstate = {published}, tppubtype = {article} } The photoelectromagnetic investigations of graphene has been performed using noncontact technique. The dependence of photoelectromagnetic response on magnetic field induction, illumination intensity for different photon energies, and frequency of illumination chopping is presented. We anticipate our paper to be a starting point for investigations of carrier diffusion length in this material. Such investigations should be essential for development of graphene electronic and optoelectronic devices. |
Jesionek, M; Nowak, M; Szperlich, P; Kępińska, M; Mistewicz, K; Toroń, B; Stróż, D; Szala, J; Rzychoń, T Properties of Sonochemically Prepared CuInxGa1-xS2 and CuInxGa1-xSe2 Journal Article Acta Physica Polonica A, 126 (5), pp. 1107 - 1109, 2014. @article{Jesionek2014, title = {Properties of Sonochemically Prepared CuInxGa1-xS2 and CuInxGa1-xSe2}, author = {M. Jesionek and M. Nowak and P. Szperlich and M. Kępińska and K. Mistewicz and B. Toroń and D. Stróż and J. Szala and T. Rzychoń }, url = {http://przyrbwn.icm.edu.pl/APP/PDF/126/a126z5p14.pdf}, doi = {10.12693/APhysPolA.126.1107}, year = {2014}, date = {2014-11-01}, journal = {Acta Physica Polonica A}, volume = {126}, number = {5}, pages = {1107 - 1109}, abstract = {Nanoparticles of chalcopyrites copper indium gallium sulfide (CuInxGa1-xS2 or CIGS) and copper indium gallium selenide (CuInxGa1-xSe2 or CIGSe) were fabricated sonochemically. They were characterized by X-ray diffraction, scanning electron microscopy, energy dispersive X-ray spectroscopy, high resolution transmission electron microscopy, selected area electron diffraction, and diffuse reflectance spectroscopy. The electrical and photoelectrical properties of the fabricated nanomaterials were investigated.}, keywords = {}, pubstate = {published}, tppubtype = {article} } Nanoparticles of chalcopyrites copper indium gallium sulfide (CuInxGa1-xS2 or CIGS) and copper indium gallium selenide (CuInxGa1-xSe2 or CIGSe) were fabricated sonochemically. They were characterized by X-ray diffraction, scanning electron microscopy, energy dispersive X-ray spectroscopy, high resolution transmission electron microscopy, selected area electron diffraction, and diffuse reflectance spectroscopy. The electrical and photoelectrical properties of the fabricated nanomaterials were investigated. |
Toroń, B; Nowak, M; Kępińska, M; Szperlich, P Mobility of Ferroelectric Domains in Antimony Sulfoiodide Journal Article ACTA PHYSICA POLONICA A, 126 (5), pp. 1093-1095, 2014, ISSN: 0587-4246, (43rd Jaszowiec International School and Conference on the Physics of Semiconductors, Wisla, POLAND, JUN 07-12, 2014). @article{ISI:000346069100011, title = {Mobility of Ferroelectric Domains in Antimony Sulfoiodide}, author = {B. Toroń and M. Nowak and M. Kępińska and P. Szperlich}, url = {http://przyrbwn.icm.edu.pl/APP/PDF/126/a126z5p10.pdf}, doi = {10.12693/APhysPolA.126.1093 }, issn = {0587-4246}, year = {2014}, date = {2014-11-01}, journal = {ACTA PHYSICA POLONICA A}, volume = {126}, number = {5}, pages = {1093-1095}, organization = {Polish Acad Sci, Inst Phys; Univ Warsaw, Fac Phys, Inst Expt Phys; Univ Warsaw, Fac Phys, Inst Theoret Phys; Polish Acad Sci, Inst High Pressure Phys; Wroclaw Univ Technol, Inst Phys; Inst Elect Technol; Polish Acad Sci, Comm Phys; Fdn Pro Physica; Minist Sci & Higher Educ; US Off Naval Res Global; US Army Technol Ctr Atlantic; Ap Vacuum; Bruker; Comef; Karia; Labis; Pfeiffer Vacuum; Nano Carbon}, abstract = {Different optical energy gaps in ferroelectric and paraelectric phases as well as light scattering on domain walls allow to observe ferroelectric domains in antimony sulfoiodide (SbSI) near the Curie temperature. Mobility 8.11(44) x 10(-8) m(2)/(V s) of ferroelectric domain walls under external electric field has been determined along c-axis of SbSI single crystals using optical transmittance microscopy.}, note = {43rd Jaszowiec International School and Conference on the Physics of Semiconductors, Wisla, POLAND, JUN 07-12, 2014}, keywords = {}, pubstate = {published}, tppubtype = {article} } Different optical energy gaps in ferroelectric and paraelectric phases as well as light scattering on domain walls allow to observe ferroelectric domains in antimony sulfoiodide (SbSI) near the Curie temperature. Mobility 8.11(44) x 10(-8) m(2)/(V s) of ferroelectric domain walls under external electric field has been determined along c-axis of SbSI single crystals using optical transmittance microscopy. |
Toroń, B; Nowak, M; Kępińska, M; Grabowski, A; Szala, J; Szperlich, P; Malka, I; Rzychoń, T A new heterostructures fabrication technique and properties of produced SbSI/Sb2S3 heterostructures Journal Article OPTICS AND LASERS IN ENGINEERING, 55 , pp. 232-236, 2014, ISSN: 0143-8166. @article{ISI:000331417300029, title = {A new heterostructures fabrication technique and properties of produced SbSI/Sb2S3 heterostructures}, author = {B. Toroń and M. Nowak and M. Kępińska and A. Grabowski and J. Szala and P. Szperlich and I. Malka and T. Rzychoń}, url = {http://www.sciencedirect.com/science/article/pii/S0143816613003473}, doi = {10.1016/j.optlaseng.2013.11.012}, issn = {0143-8166}, year = {2014}, date = {2014-04-01}, journal = {OPTICS AND LASERS IN ENGINEERING}, volume = {55}, pages = {232-236}, abstract = {A new technique for heterostructure fabrication in semiconducting compounds has been proposed. Heterojunctions have been made by applying CO2 laser beam. In contradistinction to currently applied methods (MBE - Molecular Beam Epitaxy and CVD - Chemical Vapor Deposition) the presented technique is simple, of low-cost and very efficient. The new technique has been tested on antimony sulfoiodide (SbSI) single crystals, i.e., a semiconducting, ferroelectric material characterized by many valuable properties. The most important structural, optical and electrical properties of the obtained heterostructures have been presented. Studies have shown that in the CO2 laser treated samples the junction exists between SbSI single crystal and amorphous phase of antimony sulfide (Sb2S3). At room temperature difference between energy gaps of both parts of SbSI/Sb2S3 heterostructure is equal to 0.3 eV. This leads to many interesting phenomena and potential applications. (C) 2013 Elsevier Ltd. All rights reserved.}, keywords = {}, pubstate = {published}, tppubtype = {article} } A new technique for heterostructure fabrication in semiconducting compounds has been proposed. Heterojunctions have been made by applying CO2 laser beam. In contradistinction to currently applied methods (MBE - Molecular Beam Epitaxy and CVD - Chemical Vapor Deposition) the presented technique is simple, of low-cost and very efficient. The new technique has been tested on antimony sulfoiodide (SbSI) single crystals, i.e., a semiconducting, ferroelectric material characterized by many valuable properties. The most important structural, optical and electrical properties of the obtained heterostructures have been presented. Studies have shown that in the CO2 laser treated samples the junction exists between SbSI single crystal and amorphous phase of antimony sulfide (Sb2S3). At room temperature difference between energy gaps of both parts of SbSI/Sb2S3 heterostructure is equal to 0.3 eV. This leads to many interesting phenomena and potential applications. (C) 2013 Elsevier Ltd. All rights reserved. |
Szperlich, P; Toroń, B; Nowak, M; Jesionek, M; Kępińska, M; Bogdanowicz, W Growth of large SbSI crystals Journal Article Materials Science-Poland, 32 (4), pp. 669-675, 2014, ISSN: 2083-1331. @article{, title = {Growth of large SbSI crystals}, author = {P. Szperlich and B. Toroń and M. Nowak and M. Jesionek and M. Kępińska and W. Bogdanowicz}, url = {http://dx.doi.org/10.2478/S13536-014-0247-4}, doi = {10.2478/S13536-014-0247-4}, issn = {2083-1331}, year = {2014}, date = {2014-01-01}, journal = {Materials Science-Poland}, volume = {32}, number = {4}, pages = {669-675}, publisher = {Versita}, abstract = {In this paper a novel method of SbSI single crystals fabrication is presented. In this method a sonochemically prepared SbSI gel is used as an intermediate product in a vapour growth process. The main advantages of the presented technique are as follows. First, the SbSI gel source material has lower temperature of sublimation and allows to avoid explosions during SbSI synthesis (the sonochemical synthesis is free of any explosion hazard). Second, but not least, the grown SbSI single crystals have smaller ratio of longitudinal and lateral dimensions. The cross sections of the presented crystals are relatively large (they are up to 9 mm2). The crystals have been characterized by X-ray diffraction, angle-resolved optical spectroscopy, and diffusive reflectivity.}, keywords = {}, pubstate = {published}, tppubtype = {article} } In this paper a novel method of SbSI single crystals fabrication is presented. In this method a sonochemically prepared SbSI gel is used as an intermediate product in a vapour growth process. The main advantages of the presented technique are as follows. First, the SbSI gel source material has lower temperature of sublimation and allows to avoid explosions during SbSI synthesis (the sonochemical synthesis is free of any explosion hazard). Second, but not least, the grown SbSI single crystals have smaller ratio of longitudinal and lateral dimensions. The cross sections of the presented crystals are relatively large (they are up to 9 mm2). The crystals have been characterized by X-ray diffraction, angle-resolved optical spectroscopy, and diffusive reflectivity. |
Nowak, M; Mistewicz, K; Nowrot, A; Szperlich, P; Jesionek, M; Starczewska, A Transient characteristics and negative photoconductivity of SbSI humidity sensor Journal Article Sensors and Actuators A: Physical, 210 (0), pp. 32 - 40, 2014, ISSN: 0924-4247. @article{Nowak201432, title = {Transient characteristics and negative photoconductivity of SbSI humidity sensor}, author = {M. Nowak and K. Mistewicz and A. Nowrot and P. Szperlich and M. Jesionek and A. Starczewska}, url = {http://www.sciencedirect.com/science/article/pii/S0924424714000685}, doi = {10.1016/j.sna.2014.02.004}, issn = {0924-4247}, year = {2014}, date = {2014-01-01}, journal = {Sensors and Actuators A: Physical}, volume = {210}, number = {0}, pages = {32 - 40}, abstract = {Abstract This paper presents the influence of water vapor on the photoconductivity of antimony sulfoiodide (SbSI) nanowires obtained sonochemically. It is done to explore the applicability of SbSI photoconductor as a humidity sensor. Character of the response of DC photoconductivity current on the switching on and switching off illumination of SbSI gel depends on relative humidity (RH) of nitrogen environment. While positive photoconductivity is observed for low RH, the negative effect occurs for high RH. The least square fitting of the transient characteristics of photoconductivity allowed to present equivalent photoelectric model of SbSI gel. The changes of the parameters of the model with increasing humidity and illumination intensity are presented. Mechanism of light-induced desorption of H2O from SbSI nanowires’ surface is discussed.}, keywords = {}, pubstate = {published}, tppubtype = {article} } Abstract This paper presents the influence of water vapor on the photoconductivity of antimony sulfoiodide (SbSI) nanowires obtained sonochemically. It is done to explore the applicability of SbSI photoconductor as a humidity sensor. Character of the response of DC photoconductivity current on the switching on and switching off illumination of SbSI gel depends on relative humidity (RH) of nitrogen environment. While positive photoconductivity is observed for low RH, the negative effect occurs for high RH. The least square fitting of the transient characteristics of photoconductivity allowed to present equivalent photoelectric model of SbSI gel. The changes of the parameters of the model with increasing humidity and illumination intensity are presented. Mechanism of light-induced desorption of H2O from SbSI nanowires’ surface is discussed. |
Mistewicz, K; Nowak, M; Szperlich, P; Jesionek, M; Paszkiewicz, R SbSI Single Nanowires as Humidity Sensors Journal Article Acta Physica Polonica A, 126 (5), pp. 1113-1114, 2014. @article{mistewicz2014sbsi, title = {SbSI Single Nanowires as Humidity Sensors}, author = {K. Mistewicz and M. Nowak and P. Szperlich and M. Jesionek and R. Paszkiewicz}, url = {http://przyrbwn.icm.edu.pl/APP/PDF/126/a126z5p16.pdf}, doi = {10.12693/APhysPolA.126.1113}, year = {2014}, date = {2014-01-01}, journal = {Acta Physica Polonica A}, volume = {126}, number = {5}, pages = {1113-1114}, publisher = {Institute of Physics, Polish Academy of Science}, abstract = {For the first time influence of humidity on photoconductivity transient characteristics are studied for antimony sulfoiodide (SbSI) single nanowires. While negative photoconductivity is observed for SbSI gel, made up of large quantity of nanowires, only the positive effect occurs for SbSI single nanowires. Photoconductivity current response on switching on and off illumination in moist N2 represents so-called hook anomaly.}, keywords = {}, pubstate = {published}, tppubtype = {article} } For the first time influence of humidity on photoconductivity transient characteristics are studied for antimony sulfoiodide (SbSI) single nanowires. While negative photoconductivity is observed for SbSI gel, made up of large quantity of nanowires, only the positive effect occurs for SbSI single nanowires. Photoconductivity current response on switching on and off illumination in moist N2 represents so-called hook anomaly. |
Nowak, M; Nowrot, A; Szperlich, P; Jesionek, M; Kępińska, M; Starczewska, A; Mistewicz, K; Stróż, D; Szala, J; Rzychoń, T; Talik, E; Wrzalik, R Fabrication and characterization of SbSI gel for humidity sensors Journal Article Sensors and Actuators A: Physical, 210 (0), pp. 119 - 130, 2014, ISSN: 0924-4247. @article{Nowak2014119, title = {Fabrication and characterization of SbSI gel for humidity sensors}, author = { M. Nowak and A. Nowrot and P. Szperlich and M. Jesionek and M. Kępińska and A. Starczewska and K. Mistewicz and D. Stróż and J. Szala and T. Rzychoń and E. Talik and R. Wrzalik}, url = {http://www.sciencedirect.com/science/article/pii/S0924424714000764}, doi = {10.1016/j.sna.2014.02.012}, issn = {0924-4247}, year = {2014}, date = {2014-01-01}, journal = {Sensors and Actuators A: Physical}, volume = {210}, number = {0}, pages = {119 - 130}, abstract = {A sonochemical method for direct preparation in water of a gel consisted of nanocrystalline antimony sulfoiodide (SbSI) nanowires is presented for the first time. The product was characterized by using techniques such as powder X-ray diffraction, scanning electron microscopy, energy dispersive X-ray analysis, high-resolution transmission electron microscopy, selected area electron diffraction, X-ray photoelectron spectroscopy, optical diffuse reflection spectroscopy and IR spectroscopy. The electrical properties of the fabricated nanomaterial have been investigated, too. The nanowires are a semiconducting ferroelectric with Curie constant equal C = 1.41(14) × 10^4 K and Curie temperature equal TC = 293.0(2) K. The indirect allowed energy band gap of this material is EgIa = 1.880(2) eV. Such prepared SbSI nanowires have optical and electrical properties suitable for ferroelectric nanosensors.}, keywords = {}, pubstate = {published}, tppubtype = {article} } A sonochemical method for direct preparation in water of a gel consisted of nanocrystalline antimony sulfoiodide (SbSI) nanowires is presented for the first time. The product was characterized by using techniques such as powder X-ray diffraction, scanning electron microscopy, energy dispersive X-ray analysis, high-resolution transmission electron microscopy, selected area electron diffraction, X-ray photoelectron spectroscopy, optical diffuse reflection spectroscopy and IR spectroscopy. The electrical properties of the fabricated nanomaterial have been investigated, too. The nanowires are a semiconducting ferroelectric with Curie constant equal C = 1.41(14) × 10^4 K and Curie temperature equal TC = 293.0(2) K. The indirect allowed energy band gap of this material is EgIa = 1.880(2) eV. Such prepared SbSI nanowires have optical and electrical properties suitable for ferroelectric nanosensors. |
Szperlich, P; Nowak, M; Jesionek, M; Starczewska, A; Mistewicz, K; Szala, J Desorption of Gasses Induced by Ferroelectric Transition in SbSI Nanowires Journal Article Acta Physica Polonica A, 126 (5), pp. 1110-1112, 2014. @article{szperlich2014desorption, title = {Desorption of Gasses Induced by Ferroelectric Transition in SbSI Nanowires}, author = {P. Szperlich and M. Nowak and M. Jesionek and A. Starczewska and K. Mistewicz and J. Szala}, url = {http://przyrbwn.icm.edu.pl/APP/PDF/126/a126z5p15.pdf}, doi = {10.12693/APhysPolA.126.1110}, year = {2014}, date = {2014-01-01}, journal = {Acta Physica Polonica A}, volume = {126}, number = {5}, pages = {1110-1112}, publisher = {Institute of Physics, Polish Academy of Science}, abstract = {For the first time the thermal desorption of H2, N2, O2 and CO2 is presented for antimony sulfoiodide (SbSI) xerogel made up of large quantity nanowires. The desorption has been observed near ferroelectric phase transition established at Tc = 293.0(2) K. The Sievert measurements have shown that the hydrogen uptake is linear function of H2 pressure (when p < 1.1 × 10^5 Pa). The hydrogen storage density in SbSI gel amounted 1.24 × 10^-2 wt% (for p = 1.08 × 10^5 Pa at room temperature).}, keywords = {}, pubstate = {published}, tppubtype = {article} } For the first time the thermal desorption of H2, N2, O2 and CO2 is presented for antimony sulfoiodide (SbSI) xerogel made up of large quantity nanowires. The desorption has been observed near ferroelectric phase transition established at Tc = 293.0(2) K. The Sievert measurements have shown that the hydrogen uptake is linear function of H2 pressure (when p < 1.1 × 10^5 Pa). The hydrogen storage density in SbSI gel amounted 1.24 × 10^-2 wt% (for p = 1.08 × 10^5 Pa at room temperature). |
Mistewicz, K; Nowak, M; Szperlich, P; Nowrot, A Humidity Sensing Using SbSI Nanophotodetectors Inproceedings Frontiers in Optics 2014, pp. JTu3A.31, Optical Society of America, 2014, ISBN: 1-55752-286-3. @inproceedings{Mistewicz:14, title = {Humidity Sensing Using SbSI Nanophotodetectors}, author = {K. Mistewicz and M. Nowak and P. Szperlich and A. Nowrot}, url = {http://www.opticsinfobase.org/abstract.cfm?URI=LS-2014-JTu3A.31}, doi = {10.1364/FIO.2014.JTu3A.31}, isbn = {1-55752-286-3}, year = {2014}, date = {2014-01-01}, booktitle = {Frontiers in Optics 2014}, journal = {Frontiers in Optics 2014}, pages = {JTu3A.31}, publisher = {Optical Society of America}, abstract = {This paper shows usability of antimony sulfoiodide (SbSI) nanowires as photoconductive humidity sensors. Qualitatively different photoconductivity transient characteristics for low, and high humidity have been observed. Desorption of H2O from SbSI nanowires surface is reported.}, keywords = {}, pubstate = {published}, tppubtype = {inproceedings} } This paper shows usability of antimony sulfoiodide (SbSI) nanowires as photoconductive humidity sensors. Qualitatively different photoconductivity transient characteristics for low, and high humidity have been observed. Desorption of H2O from SbSI nanowires surface is reported. |
Starczewska, A; Nowak, M; Szperlich, P; Bednarczyk, I; Mistewicz, K; Kępińska, M; Duka, P Antimony Sulfoiodide as Novel Material for Photonic Crystals Inproceedings Frontiers in Optics 2014, pp. JW3A.28, Optical Society of America, 2014, ISBN: 1-55752-286-3. @inproceedings{Starczewska:14, title = {Antimony Sulfoiodide as Novel Material for Photonic Crystals}, author = {A. Starczewska and M. Nowak and P. Szperlich and I. Bednarczyk and K. Mistewicz and M. Kępińska and P. Duka}, url = {http://www.opticsinfobase.org/abstract.cfm?URI=LS-2014-JW3A.28}, doi = {10.1364/FIO.2014.JW3A.28}, isbn = {1-55752-286-3}, year = {2014}, date = {2014-01-01}, booktitle = {Frontiers in Optics 2014}, journal = {Frontiers in Optics 2014}, pages = {JW3A.28}, publisher = {Optical Society of America}, abstract = {Semiconducting ferroelectrics promise construction of crystals with tuned photonic band gap. Such structures were synthesized by self-assembling SiO2 spheres, followed by melt infiltration with antimony sulfoiodide and the removal of SiO2 spheres by chemical etching.}, keywords = {}, pubstate = {published}, tppubtype = {inproceedings} } Semiconducting ferroelectrics promise construction of crystals with tuned photonic band gap. Such structures were synthesized by self-assembling SiO2 spheres, followed by melt infiltration with antimony sulfoiodide and the removal of SiO2 spheres by chemical etching. |
Kępińska, M; Starczewska, A; Duka, P; Nowak, M; Szperlich, P Optical Properties of SbSI photonic crystals Journal Article Acta Physica Polonica A, 126 (5), pp. 1115-1117, 2014. @article{kkepinska2014optical, title = {Optical Properties of SbSI photonic crystals}, author = {M. Kępińska and A. Starczewska and P. Duka and M. Nowak and P. Szperlich}, url = {http://przyrbwn.icm.edu.pl/APP/PDF/126/a126z5p17.pdf}, doi = {10.12693/APhysPolA.126.1115}, year = {2014}, date = {2014-01-01}, journal = {Acta Physica Polonica A}, volume = {126}, number = {5}, pages = {1115-1117}, publisher = {Institute of Physics, Polish Academy of Science}, abstract = {This paper presents optical properties of SiO2 opals infiltrated with SbSI and inverted SbSI opals for the first time. Registered reflectance spectra exhibit Bragg's peaks connected with photonic band gap. Calculated photonic band structure has been compared with experimental results.}, keywords = {}, pubstate = {published}, tppubtype = {article} } This paper presents optical properties of SiO2 opals infiltrated with SbSI and inverted SbSI opals for the first time. Registered reflectance spectra exhibit Bragg's peaks connected with photonic band gap. Calculated photonic band structure has been compared with experimental results. |
Starczewska, A; Solecka, B; Nowak, M; Szperlich, P Dielectric Properties of SbSI in the Temperature Range of 292-475 K Journal Article Acta Physica Polonica A, 126 (5), pp. 1125–1127, 2014. @article{starczewska2014dielectric, title = {Dielectric Properties of SbSI in the Temperature Range of 292-475 K}, author = {A. Starczewska and B. Solecka and M. Nowak and P. Szperlich}, url = {http://przyrbwn.icm.edu.pl/APP/PDF/126/a126z5p20.pdf}, doi = {10.12693/APhysPolA.126.1125 }, year = {2014}, date = {2014-01-01}, journal = {Acta Physica Polonica A}, volume = {126}, number = {5}, pages = {1125--1127}, publisher = {Institute of Physics, Polish Academy of Science}, abstract = {Methodology of impedance measurements and ferroelectric hysteresis loops observed in temperature range 292-475 K for antimony sulfoiodide (SbSI) grown from vapour phase are discussed. Temperature dependences of spontaneous polarization and coercive field of SbSI crystals are presented.}, keywords = {}, pubstate = {published}, tppubtype = {article} } Methodology of impedance measurements and ferroelectric hysteresis loops observed in temperature range 292-475 K for antimony sulfoiodide (SbSI) grown from vapour phase are discussed. Temperature dependences of spontaneous polarization and coercive field of SbSI crystals are presented. |
Starczewska, A; Szperlich, P; Nowak, M; Bednarczyk, I; Bodzenta, J; Szala, J Fabrication of SbSI Photonic Crystals Journal Article Acta Physica Polonica A, 126 (5), pp. 1118-1120, 2014. @article{starczewska2014fabrication, title = {Fabrication of SbSI Photonic Crystals}, author = {A. Starczewska and P. Szperlich and M. Nowak and I. Bednarczyk and J. Bodzenta and J. Szala}, url = {http://przyrbwn.icm.edu.pl/APP/PDF/126/a126z5p18.pdf}, doi = {10.12693/APhysPolA.126.1118 }, year = {2014}, date = {2014-01-01}, journal = {Acta Physica Polonica A}, volume = {126}, number = {5}, pages = {1118-1120}, publisher = {Institute of Physics, Polish Academy of Science}, abstract = {Semiconducting ferroelectric antimony sulfoiodide (SbSI) photonic crystals were fabricated. The SiO2 nanospheres were synthesized and gravity sedimented to obtain opal matrices. These opals were infiltrated with melted SbSI and etched in HF acid to produce inverted SbSI opals.}, keywords = {}, pubstate = {published}, tppubtype = {article} } Semiconducting ferroelectric antimony sulfoiodide (SbSI) photonic crystals were fabricated. The SiO2 nanospheres were synthesized and gravity sedimented to obtain opal matrices. These opals were infiltrated with melted SbSI and etched in HF acid to produce inverted SbSI opals. |
2013 |
Toroń, B; Nowak, M; Grabowski, A; Kępińska, M Electrical Properties of SbSI/Sb2S3 Single and Double Heterostructures Journal Article ACTA PHYSICA POLONICA A, 124 (5), pp. 830-832, 2013, ISSN: 0587-4246, (42nd Jaszowiec International School and Conference on the Physics of Semiconductors, Wisla, POLAND, JUN 22-27, 2013). @article{ISI:000328913500022, title = {Electrical Properties of SbSI/Sb2S3 Single and Double Heterostructures}, author = {B. Toroń and M. Nowak and A. Grabowski and M. Kępińska}, url = {http://przyrbwn.icm.edu.pl/APP/PDF/124/a124z5p21.pdf}, doi = {10.12693/APhysPolA.124.830 }, issn = {0587-4246}, year = {2013}, date = {2013-11-01}, journal = {ACTA PHYSICA POLONICA A}, volume = {124}, number = {5}, pages = {830-832}, organization = {Polish Acad Sci, Inst Phys; Univ Warsaw, Fac Phys, Inst Expt Phys; Univ Warsaw, Fac Phys, Inst Theoret Phys; Polish Acad Sci, Inst High Pressure Phys; Wroclaw Univ Technol; Inst Elect Technol; Polish Acad Sci, Comm Phys; Minist Sci & Higher Educ; Kronenberg Fdn Citi Handlowy; U S Army Forward Element Command Atlantic; European Reg Dev Fund Projects Nanobiom, MIME & IntechFun; PANalyt; Labis Oxford Instruments}, abstract = {The SbSI/Sb2S3 single heterostructures as well as Sb2S3/SbSI/Sb2S3 and SbSI/Sb2S3/SbSI double heterostructures have been produced by applying CO2 laser treatment of p-type SbSI single crystals. The current-voltage and transient characteristics of these heterostructures have been measured in temperatures below and above the SbSI single crystal Curie temperature (21 = 293 K). The results have been fitted with appropriate theoretical formulae to determine the following types of the investigated heterojunctions: P-p SbSI/Sb2S3, p-P-p Sb2S3/SbSI/Sb2S3 and P-p-P SbSI/Sb2S3/SbSI. Influence of the illumination on electrical properties of SbSI/Sb2S3 single and double heterostructures has been reported. Fabricated new structures may be potentially applicable in electronics and optoelectronics as a new type of metal-ferroelectric-semiconductor devices.}, note = {42nd Jaszowiec International School and Conference on the Physics of Semiconductors, Wisla, POLAND, JUN 22-27, 2013}, keywords = {}, pubstate = {published}, tppubtype = {article} } The SbSI/Sb2S3 single heterostructures as well as Sb2S3/SbSI/Sb2S3 and SbSI/Sb2S3/SbSI double heterostructures have been produced by applying CO2 laser treatment of p-type SbSI single crystals. The current-voltage and transient characteristics of these heterostructures have been measured in temperatures below and above the SbSI single crystal Curie temperature (21 = 293 K). The results have been fitted with appropriate theoretical formulae to determine the following types of the investigated heterojunctions: P-p SbSI/Sb2S3, p-P-p Sb2S3/SbSI/Sb2S3 and P-p-P SbSI/Sb2S3/SbSI. Influence of the illumination on electrical properties of SbSI/Sb2S3 single and double heterostructures has been reported. Fabricated new structures may be potentially applicable in electronics and optoelectronics as a new type of metal-ferroelectric-semiconductor devices. |
Starczewska, A; Szala, J; Kępińska, M; Nowak, M; Mistewicz, K; Sozańska, M Comparison of the investigations of photonic crystals using SEM and optical technics Journal Article Solid State Phenomena, 197 , pp. 119124, 2013. @article{Starczewska, title = {Comparison of the investigations of photonic crystals using SEM and optical technics}, author = {A. Starczewska and J. Szala and M. Kępińska and M. Nowak and K. Mistewicz and M. Sozańska}, url = {http://www.scientific.net/SSP.197.119}, doi = {10.4028/www.scientific.net/SSP.197.119}, year = {2013}, date = {2013-02-01}, journal = {Solid State Phenomena}, volume = {197}, pages = {119124}, abstract = {All over the world the investigations of nanophotonic structures called photonic crystals (PCs) are performed. These crystals have potential applications in optoelectronics, e.g. optical filters, antireflective surface coatings, lossless frequency selective mirrors. In Institute of Physics at Silesian Technical University the opal photonic crystals consisting of monodisperse spherical particles, that have diameters of several hundred nanometers, are produced using colloidal self-assembly technics. The main aim of this work is the comparison between pieces of information on morphology of photonic crystals that can be obtained from electron microscopy and from the angular characteristics of optical transmittance and reflectance. The morphology of the samples is characterized by scanning electron microscopy (SEM). Nanosphere diameters are established from statistical analysis of SEM images. The optical properties, which are determined by the photonic band structure, are studied by means of light transmission and reflection measurements. There is a relationship between the wavelength position of transmittance minimum or reflectance maximum and the diameter of the nanospheres. The size of nanospheres obtained from optical measurement results were compared with data obtained from SEM images.}, keywords = {}, pubstate = {published}, tppubtype = {article} } All over the world the investigations of nanophotonic structures called photonic crystals (PCs) are performed. These crystals have potential applications in optoelectronics, e.g. optical filters, antireflective surface coatings, lossless frequency selective mirrors. In Institute of Physics at Silesian Technical University the opal photonic crystals consisting of monodisperse spherical particles, that have diameters of several hundred nanometers, are produced using colloidal self-assembly technics. The main aim of this work is the comparison between pieces of information on morphology of photonic crystals that can be obtained from electron microscopy and from the angular characteristics of optical transmittance and reflectance. The morphology of the samples is characterized by scanning electron microscopy (SEM). Nanosphere diameters are established from statistical analysis of SEM images. The optical properties, which are determined by the photonic band structure, are studied by means of light transmission and reflection measurements. There is a relationship between the wavelength position of transmittance minimum or reflectance maximum and the diameter of the nanospheres. The size of nanospheres obtained from optical measurement results were compared with data obtained from SEM images. |
Jesionek, M; Nowak, M; Kępińska, M; Bednarczyk, I Temperature Dependences of Optical Energy Gaps of SbSI@ CNT and SbSeI@ CNT Journal Article Acta Physica Polonica A, 124 (5), pp. 836–837, 2013. @article{jesionek2013temperature, title = {Temperature Dependences of Optical Energy Gaps of SbSI@ CNT and SbSeI@ CNT}, author = { M. Jesionek and M. Nowak and M. Kępińska and I. Bednarczyk}, url = {http://przyrbwn.icm.edu.pl/APP/PDF/124/a124z5p23.pdf}, doi = {10.12693/APhysPolA.124.836}, year = {2013}, date = {2013-01-01}, journal = {Acta Physica Polonica A}, volume = {124}, number = {5}, pages = {836--837}, publisher = {Institute of Physics, Polish Academy of Science}, abstract = {This paper presents for the first time temperature dependences of optical energy gaps of SbSI@CNT and SbSeI@CNT, i.e. carbon nanotubes (CNTs) filled with antimony sulfoiodide (SbSI) and antimony selenoiodide (SbSeI). The heterostructures were prepared sonochemically using CNTs and elemental Sb, S or Se and I in the presence of solvent under ultrasonic irradiation. Spectral characteristics of diffusive transmittance and reflectance of SbSI@CNT and SbSeI@CNT were measured in temperature range 274 K < T < 333 K. The determinal temperature dependence of indirect forbidden optical energy gap of SbSI@CNT has been fitted with E_{gIf} (T) = (1.92(2)-3.6(6) × 10^{-4} × T) eV. Indirect allowed optical energy gap of SbSeI@CNT has been fitted with E_{gIa} (T) = (1.817(5)-7.1(2) × 10^{-4} × T) eV.}, keywords = {}, pubstate = {published}, tppubtype = {article} } This paper presents for the first time temperature dependences of optical energy gaps of SbSI@CNT and SbSeI@CNT, i.e. carbon nanotubes (CNTs) filled with antimony sulfoiodide (SbSI) and antimony selenoiodide (SbSeI). The heterostructures were prepared sonochemically using CNTs and elemental Sb, S or Se and I in the presence of solvent under ultrasonic irradiation. Spectral characteristics of diffusive transmittance and reflectance of SbSI@CNT and SbSeI@CNT were measured in temperature range 274 K < T < 333 K. The determinal temperature dependence of indirect forbidden optical energy gap of SbSI@CNT has been fitted with E_{gIf} (T) = (1.92(2)-3.6(6) × 10^{-4} × T) eV. Indirect allowed optical energy gap of SbSeI@CNT has been fitted with E_{gIa} (T) = (1.817(5)-7.1(2) × 10^{-4} × T) eV. |
Mistewicz, K; Nowak, M; Wrzalik, R; Jesionek, M; Szperlich, P; Paszkiewicz, R; Guiseppi-Elie, A Quantum Effects in Electrical Conductivity and Photoconductivity of Single SbSI Nanowire Journal Article Acta Physica Polonica A, 124 (5), pp. 827-828, 2013. @article{mistewicza2013quantum, title = {Quantum Effects in Electrical Conductivity and Photoconductivity of Single SbSI Nanowire}, author = {K. Mistewicz and M. Nowak and R. Wrzalik and M. Jesionek and P. Szperlich and R. Paszkiewicz and A. Guiseppi-Elie}, url = {http://przyrbwn.icm.edu.pl/APP/PDF/124/a124z5p20.pdf}, doi = {10.12693/APhysPolA.124.827}, year = {2013}, date = {2013-01-01}, journal = {Acta Physica Polonica A}, volume = {124}, number = {5}, pages = {827-828}, abstract = {For the first time current quantization is reported for antimony sulfoiodide (SbSI) nanowires. It has been registered in current responses on electric field switching as well as on illumination on and off. Current steps determined in all experiments have been equal to each other within the experimental error. It has been explained by the quantized change of free carrier concentration in nanowire. Lateral dimensions of SbSI nanowires estimated from quantum steps are comparable with geometrical data reported for the same technology of material preparation.}, keywords = {}, pubstate = {published}, tppubtype = {article} } For the first time current quantization is reported for antimony sulfoiodide (SbSI) nanowires. It has been registered in current responses on electric field switching as well as on illumination on and off. Current steps determined in all experiments have been equal to each other within the experimental error. It has been explained by the quantized change of free carrier concentration in nanowire. Lateral dimensions of SbSI nanowires estimated from quantum steps are comparable with geometrical data reported for the same technology of material preparation. |
Nowak, M; Bober, Ł; Borkowski, B; Kępińska, M; Szperlich, P; Stróż, D; Sozańska, M Quantum efficiency coefficient for photogeneration of carriers in SbSI nanowires Journal Article Optical Materials, 35 (12), pp. 2208 - 2216, 2013, ISSN: 0925-3467. @article{Nowak20132208, title = {Quantum efficiency coefficient for photogeneration of carriers in SbSI nanowires}, author = {M. Nowak and Ł. Bober and B. Borkowski and M. Kępińska and P. Szperlich and D. Stróż and M. Sozańska}, url = {http://www.sciencedirect.com/science/article/pii/S0925346713002942}, doi = {http://dx.doi.org/10.1016/j.optmat.2013.06.003}, issn = {0925-3467}, year = {2013}, date = {2013-01-01}, journal = {Optical Materials}, volume = {35}, number = {12}, pages = {2208 - 2216}, abstract = {Abstract This paper presents investigations of the quantum efficiency coefficient for the photogeneration of carriers in aligned antimony sulfoiodide (SbSI) nanowires. Therefore the spectral dependences (between 488 and 700 nm) of photoconductivity current (IPC) were measured for temperatures from 263 to 323 K and for different light intensities. The least squares method was applied to fit the experimental IPC data with appropriate theoretical dependence. From this fitting, diffusion length and surface recombination velocity of carriers as well as spectral dependences of quantum efficiency coefficients for different temperatures and different light intensities were obtained. A comparison of the values of absorption coefficient obtained from the measurements of optical diffusive reflectance and from evaluation of the quantum efficiency coefficient is presented.}, keywords = {}, pubstate = {published}, tppubtype = {article} } Abstract This paper presents investigations of the quantum efficiency coefficient for the photogeneration of carriers in aligned antimony sulfoiodide (SbSI) nanowires. Therefore the spectral dependences (between 488 and 700 nm) of photoconductivity current (IPC) were measured for temperatures from 263 to 323 K and for different light intensities. The least squares method was applied to fit the experimental IPC data with appropriate theoretical dependence. From this fitting, diffusion length and surface recombination velocity of carriers as well as spectral dependences of quantum efficiency coefficients for different temperatures and different light intensities were obtained. A comparison of the values of absorption coefficient obtained from the measurements of optical diffusive reflectance and from evaluation of the quantum efficiency coefficient is presented. |
Nowak, M; Szperlich, P Temperature dependence of energy band gap and spontaneous polarization of SbSI nanowires Journal Article Optical Materials, 35 (6), pp. 1200 - 1206, 2013, ISSN: 0925-3467. @article{Nowak20131200, title = {Temperature dependence of energy band gap and spontaneous polarization of SbSI nanowires}, author = {M. Nowak and P. Szperlich}, url = {http://www.sciencedirect.com/science/article/pii/S0925346713000487}, doi = {http://dx.doi.org/10.1016/j.optmat.2013.01.020}, issn = {0925-3467}, year = {2013}, date = {2013-01-01}, journal = {Optical Materials}, volume = {35}, number = {6}, pages = {1200 - 1206}, abstract = {For the first time temperature dependence of optical energy gap of antimony sulfoiodide (SbSI) nanowires has been determined. In ferroelectric phase (for 241 K < T < Tc = 292 K) the evaluated indirect forbidden optical energy gap has been fitted by EgfI(T) = [2.195(3) − 10.8(1) × 10−4T] eV. In paraelectric phase (Tc = 292 K < T < 344 K) the energy gap has been described by EgfI(T) = [2.152(4) − 9.3(1) × 10−4T] eV. It has been estimated that at the temperature of 240 K the spontaneous polarization of the SbSI nanowires has the maximum value of about 0.08 C/m2.}, keywords = {}, pubstate = {published}, tppubtype = {article} } For the first time temperature dependence of optical energy gap of antimony sulfoiodide (SbSI) nanowires has been determined. In ferroelectric phase (for 241 K < T < Tc = 292 K) the evaluated indirect forbidden optical energy gap has been fitted by EgfI(T) = [2.195(3) − 10.8(1) × 10−4T] eV. In paraelectric phase (Tc = 292 K < T < 344 K) the energy gap has been described by EgfI(T) = [2.152(4) − 9.3(1) × 10−4T] eV. It has been estimated that at the temperature of 240 K the spontaneous polarization of the SbSI nanowires has the maximum value of about 0.08 C/m2. |
2012 |
Starczewska, A; Nowak, M; Szperlich, P; Toroń, B; Mistewicz, K; Stróż, D; Szala, J Influence of humidity on impedance of SbSI gel Journal Article SENSORS AND ACTUATORS A-PHYSICAL, 183 , pp. 34-42, 2012, ISSN: 0924-4247. @article{ISI:000307032600006, title = {Influence of humidity on impedance of SbSI gel}, author = {A. Starczewska and M. Nowak and P. Szperlich and B. Toroń and K. Mistewicz and D. Stróż and J. Szala}, url = {http://www.sciencedirect.com/science/article/pii/S0924424712003809}, doi = {10.1016/j.sna.2012.06.009}, issn = {0924-4247}, year = {2012}, date = {2012-08-01}, journal = {SENSORS AND ACTUATORS A-PHYSICAL}, volume = {183}, pages = {34-42}, abstract = {This paper presents the effect of water vapor on the electrical response of antimony sulfoiodide (SbSI) nanowires obtained sonochemically to explore its application as a humidity sensor. For the first time this material has been studied using impedance spectroscopy. The measurements have been made in nitrogen for various humidities and temperatures. The real part of the total complex impedance is found to decrease by three orders of magnitude with the increase of humidity from 10% to 85%. Influence of temperature and humidity on relaxation time of SbSI is reported. The least square fitting of the Nyquist characteristics of the investigated gel allowed one to distinguish between different equivalent electric models of the SbSI gel. The changes of the parameters of the model with increasing temperature and humidity are presented. The polarization of water molecules is shown to be a major contributor to the capacitance-temperature characteristics of SbSI gel. (C) 2012 Elsevier B.V. All rights reserved.}, keywords = {}, pubstate = {published}, tppubtype = {article} } This paper presents the effect of water vapor on the electrical response of antimony sulfoiodide (SbSI) nanowires obtained sonochemically to explore its application as a humidity sensor. For the first time this material has been studied using impedance spectroscopy. The measurements have been made in nitrogen for various humidities and temperatures. The real part of the total complex impedance is found to decrease by three orders of magnitude with the increase of humidity from 10% to 85%. Influence of temperature and humidity on relaxation time of SbSI is reported. The least square fitting of the Nyquist characteristics of the investigated gel allowed one to distinguish between different equivalent electric models of the SbSI gel. The changes of the parameters of the model with increasing temperature and humidity are presented. The polarization of water molecules is shown to be a major contributor to the capacitance-temperature characteristics of SbSI gel. (C) 2012 Elsevier B.V. All rights reserved. |
Jesionek, M; Nowak, M; Szperlich, P; Stróż, D; Szala, J; Jesionek, K; Rzychoń, T Sonochemical growth of antimony selenoiodide in multiwalled carbon nanotube Journal Article Ultrasonics Sonochemistry, 19 (1), pp. 179 - 185, 2012, ISSN: 1350-4177. @article{Jesionek2012179, title = {Sonochemical growth of antimony selenoiodide in multiwalled carbon nanotube}, author = {M. Jesionek and M. Nowak and P. Szperlich and D. Stróż and J. Szala and K. Jesionek and T. Rzychoń}, url = {http://www.sciencedirect.com/science/article/pii/S1350417711001283}, doi = {10.1016/j.ultsonch.2011.06.006}, issn = {1350-4177}, year = {2012}, date = {2012-01-01}, journal = {Ultrasonics Sonochemistry}, volume = {19}, number = {1}, pages = {179 - 185}, abstract = {This paper presents, for the first time, the nanocrystalline, semiconducting antimony selenoiodide (SbSeI) grown in multi-walled carbon nanotubes (CNTs). It was prepared sonochemically using elemental Sb, Se, and I in the presence of ethanol under ultrasonic irradiation (35 kHz, 2.6 W/cm2) at 323 K for 3 h. The CNTs filled with SbSeI were characterized by using techniques such as powder X-ray diffraction, scanning electron microscopy, energy dispersive X-ray analysis, high-resolution transmission electron microscopy, selected area electron diffraction, and optical diffuse reflection spectroscopy. These investigations exhibit that the SbSeI filling the CNTs is single crystalline in nature and in the form of nanowires. It has indirect allowed energy band gap EgIf = 1.61(6) eV.}, keywords = {}, pubstate = {published}, tppubtype = {article} } This paper presents, for the first time, the nanocrystalline, semiconducting antimony selenoiodide (SbSeI) grown in multi-walled carbon nanotubes (CNTs). It was prepared sonochemically using elemental Sb, Se, and I in the presence of ethanol under ultrasonic irradiation (35 kHz, 2.6 W/cm2) at 323 K for 3 h. The CNTs filled with SbSeI were characterized by using techniques such as powder X-ray diffraction, scanning electron microscopy, energy dispersive X-ray analysis, high-resolution transmission electron microscopy, selected area electron diffraction, and optical diffuse reflection spectroscopy. These investigations exhibit that the SbSeI filling the CNTs is single crystalline in nature and in the form of nanowires. It has indirect allowed energy band gap EgIf = 1.61(6) eV. |
Toroń, B; Nowak, M; Grabowski, A; Kępińska, M; Szala, J; Rzychoń, T Optical properties of SbSI heterostructures Inproceedings Yin, S; Guo, R (Ed.): PHOTONIC FIBER AND CRYSTAL DEVICES: ADVANCES IN MATERIALS AND INNOVATIONS IN DEVICE APPLICATIONS VI, SPIE 2012, ISSN: 0277-786X, (Conference on Photonic Fiber and Crystal Devices - Advances in Materials and Innovations in Device Applications VI, San Diego, CA, AUG 12-13, 2012). @inproceedings{ISI:000312213900033, title = {Optical properties of SbSI heterostructures}, author = {B. Toroń and M. Nowak and A. Grabowski and M. Kępińska and J. Szala and T. Rzychoń}, editor = {Yin, S and Guo, R}, url = {http://www.sciencedirect.com/science/article/pii/S1350417709001709}, doi = {10.1117/12.978937}, issn = {0277-786X}, year = {2012}, date = {2012-01-01}, booktitle = {PHOTONIC FIBER AND CRYSTAL DEVICES: ADVANCES IN MATERIALS AND INNOVATIONS IN DEVICE APPLICATIONS VI}, volume = {8497}, organization = {SPIE}, series = {Proceedings of SPIE}, abstract = {The antimony sulfoiodide (SbSI) single crystal being a ferroelectric semiconductor has a large number of interesting properties. Based on SbSI single crystal a new type of heterostructures has been produced. For the first time diodes, transistors and thyristors composed of SbSI/Sb2S3 heterojunctions have been fabricated by CO2 laser irradiation of selected sections of SbSI single crystals. Treated sections are composed of amorphous antimony (III) sulphide (Sb2S3) with energy gap 0.3 eV smaller (in room temperature) than that of SbSI. The structural optical, electrical and photoelectrical characteristics of produced devices have been investigated.}, note = {Conference on Photonic Fiber and Crystal Devices - Advances in Materials and Innovations in Device Applications VI, San Diego, CA, AUG 12-13, 2012}, keywords = {}, pubstate = {published}, tppubtype = {inproceedings} } The antimony sulfoiodide (SbSI) single crystal being a ferroelectric semiconductor has a large number of interesting properties. Based on SbSI single crystal a new type of heterostructures has been produced. For the first time diodes, transistors and thyristors composed of SbSI/Sb2S3 heterojunctions have been fabricated by CO2 laser irradiation of selected sections of SbSI single crystals. Treated sections are composed of amorphous antimony (III) sulphide (Sb2S3) with energy gap 0.3 eV smaller (in room temperature) than that of SbSI. The structural optical, electrical and photoelectrical characteristics of produced devices have been investigated. |
2011 |
Kępińska, M; Nowak, M; Duka, P; Kotyczka-Morańska, M; Szperlich, P Optical properties of SbI3 single crystalline platelets Journal Article Optical Materials, 33 (11), pp. 1753 - 1759, 2011, ISSN: 0925-3467. @article{Kępińska20111753, title = {Optical properties of SbI3 single crystalline platelets}, author = {M. Kępińska and M. Nowak and P. Duka and M. Kotyczka-Morańska and P. Szperlich}, url = {http://www.sciencedirect.com/science/article/pii/S0925346711003223}, doi = {http://dx.doi.org/10.1016/j.optmat.2011.06.009}, issn = {0925-3467}, year = {2011}, date = {2011-01-01}, journal = {Optical Materials}, volume = {33}, number = {11}, pages = {1753 - 1759}, abstract = {Optical parameters of platelets of crystalline antimony triiodide (SbI3) have been evaluated using spectrogoniometric interference spectroscopy technique. Spectral characteristics of real parts of refractive indices of radiation with electric vector normal and parallel to the optical c-axis of SbI3 crystalline platelets (i.e. no, ne – refractive indices for ordinary and extraordinary rays) have been shown. The temperature dependences of spectra of optical parameters (no and absorption coefficient of radiation with electric vector normal to the optical c-axis) have been presented. The temperature dependences of fitted optical indirect allowed energy gap of SbI3, Urbach energy and phonons energies are the main findings of the presented work. The obtained results have been compared with literature data.}, keywords = {}, pubstate = {published}, tppubtype = {article} } Optical parameters of platelets of crystalline antimony triiodide (SbI3) have been evaluated using spectrogoniometric interference spectroscopy technique. Spectral characteristics of real parts of refractive indices of radiation with electric vector normal and parallel to the optical c-axis of SbI3 crystalline platelets (i.e. no, ne – refractive indices for ordinary and extraordinary rays) have been shown. The temperature dependences of spectra of optical parameters (no and absorption coefficient of radiation with electric vector normal to the optical c-axis) have been presented. The temperature dependences of fitted optical indirect allowed energy gap of SbI3, Urbach energy and phonons energies are the main findings of the presented work. The obtained results have been compared with literature data. |
2010 |
Nowak, M; Kauch, B; Szperlich, P; Stróż, D; Szala, J; Rzychoń, T; Bober, Ł; Toroń, B; Nowrot, A Sonochemical preparation of SbS1-xSexI nanowires Journal Article ULTRASONICS SONOCHEMISTRY, 17 (2), pp. 487-493, 2010, ISSN: 1350-4177. @article{ISI:000272919800036, title = {Sonochemical preparation of SbS1-xSexI nanowires}, author = {M. Nowak and B. Kauch and P. Szperlich and D. Stróż and J. Szala and T. Rzychoń and Ł. Bober and B. Toroń and A. Nowrot}, url = {http://www.sciencedirect.com/science/article/pii/S1350417709001709}, doi = {10.1016/j.ultsonch.2009.10.006}, issn = {1350-4177}, year = {2010}, date = {2010-02-01}, journal = {ULTRASONICS SONOCHEMISTRY}, volume = {17}, number = {2}, pages = {487-493}, abstract = {A sonochemical method for direct preparation of nanowires of SbS1-xSexI solid solution has been established. The SbS1-xSexI gel was synthesized using elemental Sb, S, Se and I in the presence of ethanol under ultrasonic irradiation (35 kHz, 2 W/cm(2)) at 50 degrees C for 2 h. The product was characterized by using techniques such as powder X-ray diffraction, scanning electron microscopy, high-resolution transmission electron microscopy, energy dispersive X-ray analysis, selected area electron diffraction, and optical diffuse reflection spectroscopy. The SEM and HRTEM investigations exhibit that the as-prepared samples are made up of large quantity nanowires with lateral dimensions of about 10-50 nm and lengths reaching up to several micrometers and single-crystalline in nature. The increase of molar composition of Se affects linear decrease of the indirect forbidden optical energy gap as well as the distance between (121) planes of the SbS1-xSexI nanowires. (C) 2009 Elsevier B.V. All rights reserved.}, keywords = {}, pubstate = {published}, tppubtype = {article} } A sonochemical method for direct preparation of nanowires of SbS1-xSexI solid solution has been established. The SbS1-xSexI gel was synthesized using elemental Sb, S, Se and I in the presence of ethanol under ultrasonic irradiation (35 kHz, 2 W/cm(2)) at 50 degrees C for 2 h. The product was characterized by using techniques such as powder X-ray diffraction, scanning electron microscopy, high-resolution transmission electron microscopy, energy dispersive X-ray analysis, selected area electron diffraction, and optical diffuse reflection spectroscopy. The SEM and HRTEM investigations exhibit that the as-prepared samples are made up of large quantity nanowires with lateral dimensions of about 10-50 nm and lengths reaching up to several micrometers and single-crystalline in nature. The increase of molar composition of Se affects linear decrease of the indirect forbidden optical energy gap as well as the distance between (121) planes of the SbS1-xSexI nanowires. (C) 2009 Elsevier B.V. All rights reserved. |
Nowak, M; Kotyczka-Morańska, M; Szperlich, P; Bober, Ł; Jesionek, M; Kępińska, M; Stróż, D; Kusz, J; Szala, J; Moskal, G; Rzychoń, T; Młyńczak, J; Kopczyński, K Using of sonochemically prepared components for vapor phase growing of SbI3·3S8 Journal Article Ultrasonics Sonochemistry, 17 (5), pp. 892 - 901, 2010, ISSN: 1350-4177. @article{Nowak2010892, title = {Using of sonochemically prepared components for vapor phase growing of SbI3·3S8}, author = {M. Nowak and M. Kotyczka-Morańska and P. Szperlich and Ł. Bober and M. Jesionek and M. Kępińska and D. Stróż and J. Kusz and J. Szala and G. Moskal and T. Rzychoń and J. Młyńczak and K. Kopczyński}, url = {http://www.sciencedirect.com/science/article/pii/S135041771000009X}, doi = {10.1016/j.ultsonch.2010.01.008}, issn = {1350-4177}, year = {2010}, date = {2010-01-01}, journal = {Ultrasonics Sonochemistry}, volume = {17}, number = {5}, pages = {892 - 901}, abstract = {The using of sonochemically prepared components for growth of SbI3·3S8 single crystals from the vapor phase is presented for the first time. The good optical quality of the obtained crystals is important because this material is valuable for optoelectronics due to its non-linear optical properties. The products were characterized by using techniques such as X-ray crystallography, powder X-ray diffraction, scanning electron microscopy, energy dispersive X-ray analysis, high-resolution transmission electron microscopy, selected area electron diffraction, optical diffuse reflection spectroscopy and optical transmittance spectroscopy. The direct and indirect forbidden energy gaps of SbI3·3S8 illuminated with plane polarized light with electric field parallel and perpendicular to the c-axis of the crystal have been determined. The second harmonic generation of light in the grown crystals was observed.}, keywords = {}, pubstate = {published}, tppubtype = {article} } The using of sonochemically prepared components for growth of SbI3·3S8 single crystals from the vapor phase is presented for the first time. The good optical quality of the obtained crystals is important because this material is valuable for optoelectronics due to its non-linear optical properties. The products were characterized by using techniques such as X-ray crystallography, powder X-ray diffraction, scanning electron microscopy, energy dispersive X-ray analysis, high-resolution transmission electron microscopy, selected area electron diffraction, optical diffuse reflection spectroscopy and optical transmittance spectroscopy. The direct and indirect forbidden energy gaps of SbI3·3S8 illuminated with plane polarized light with electric field parallel and perpendicular to the c-axis of the crystal have been determined. The second harmonic generation of light in the grown crystals was observed. |
Stróż, D; Nowak, M; Jesionek, M; Bałdys, K Structure of antimony sulfoiodide ultrasonically prepared in carbon nanotubes Journal Article Solid State Phenomena, 163 , pp. 88-92, 2010. @article{stroz2010structure, title = {Structure of antimony sulfoiodide ultrasonically prepared in carbon nanotubes}, author = {D. Stróż and M. Nowak and M. Jesionek and K. Bałdys}, url = {http://www.scientific.net/SSP.163.88.pdf}, doi = {10.4028/www.scientific.net/SSP.163.88}, year = {2010}, date = {2010-01-01}, journal = {Solid State Phenomena}, volume = {163}, pages = {88-92}, publisher = {Trans Tech Publ}, abstract = {This paper presents a brand new hybrid material on the nanometric scale: the antimony sulfoiodide (SbSI) within carbon nanotubes (CNTs). It was prepared in CNTs ultrasonically by using elemental antimony (Sb), sulfur (S) and iodide (I) in the presence of methanol under ultrasonic irradiation (34 kHz, 2.6 W/cm2). The sonochemical process was leaded for 3 hours at 323 K. The antimony sulfoiodide (SbSI) consisted in multiwalled carbon nanotubes (CNTs) were characterized high-resolution transmission electron microscopy (HRTEM). These investigations exhibit that the SbSI filling the CNTs has single-crystal structure in nature and in the form of multiwalled carbon nanotubes. The SbSI grown in CNTs are very promising materials for further investigations as well as for some industrial and medical applications.}, keywords = {}, pubstate = {published}, tppubtype = {article} } This paper presents a brand new hybrid material on the nanometric scale: the antimony sulfoiodide (SbSI) within carbon nanotubes (CNTs). It was prepared in CNTs ultrasonically by using elemental antimony (Sb), sulfur (S) and iodide (I) in the presence of methanol under ultrasonic irradiation (34 kHz, 2.6 W/cm2). The sonochemical process was leaded for 3 hours at 323 K. The antimony sulfoiodide (SbSI) consisted in multiwalled carbon nanotubes (CNTs) were characterized high-resolution transmission electron microscopy (HRTEM). These investigations exhibit that the SbSI filling the CNTs has single-crystal structure in nature and in the form of multiwalled carbon nanotubes. The SbSI grown in CNTs are very promising materials for further investigations as well as for some industrial and medical applications. |
Nowak, M; Szperlich, P; Talik, E; Szala, J; Rzychoń, T; Stróż, D; Nowrot, A; Solecka, B Sonochemical preparation of antimony subiodide Journal Article Ultrasonics Sonochemistry, 17 (1), pp. 219 - 227, 2010, ISSN: 1350-4177. @article{Nowak2010219, title = {Sonochemical preparation of antimony subiodide}, author = {M. Nowak and P. Szperlich and E. Talik and J. Szala and T. Rzychoń and D. Stróż and A. Nowrot and B. Solecka}, url = {http://www.sciencedirect.com/science/article/pii/S1350417709000960}, doi = {http://dx.doi.org/10.1016/j.ultsonch.2009.05.016}, issn = {1350-4177}, year = {2010}, date = {2010-01-01}, journal = {Ultrasonics Sonochemistry}, volume = {17}, number = {1}, pages = {219 - 227}, abstract = {The substantiated isolation of the antimony subiodide (Sb3I) is presented for the first time. It has been prepared using elemental Sb and I in ethanol under ultrasonic irradiation at 323 K. Its composition was characterized using X-ray photoelectron spectroscopy (XPS) and energy dispersive X-ray analysis (EDAX). The scanning electron microscopy (SEM) and high-resolution transmission electron microscopy (HRTEM) investigations exhibit that the samples are made up of large quantity of nanoparticles with diameters smaller than 20 nm and single crystalline in nature. The interplanar spacings in Sb3I that have been determined using powder X-ray diffraction (XRD), selected area electron diffraction (SAED) and HRTEM are very similar. Surprisingly, the registered XRD patterns are identical to the one reported earlier for Sb4O5I2.}, keywords = {}, pubstate = {published}, tppubtype = {article} } The substantiated isolation of the antimony subiodide (Sb3I) is presented for the first time. It has been prepared using elemental Sb and I in ethanol under ultrasonic irradiation at 323 K. Its composition was characterized using X-ray photoelectron spectroscopy (XPS) and energy dispersive X-ray analysis (EDAX). The scanning electron microscopy (SEM) and high-resolution transmission electron microscopy (HRTEM) investigations exhibit that the samples are made up of large quantity of nanoparticles with diameters smaller than 20 nm and single crystalline in nature. The interplanar spacings in Sb3I that have been determined using powder X-ray diffraction (XRD), selected area electron diffraction (SAED) and HRTEM are very similar. Surprisingly, the registered XRD patterns are identical to the one reported earlier for Sb4O5I2. |
2009 |
Nowak, M; Jesionek, M; Szperlich, P; Szala, J; Rzychoń, T; Stróż, D Sonochemical growth of antimony sulfoiodide in multiwalled carbon nanotube Journal Article Ultrasonics Sonochemistry, 16 (6), pp. 800 - 804, 2009, ISSN: 1350-4177. @article{Nowak2009800, title = {Sonochemical growth of antimony sulfoiodide in multiwalled carbon nanotube}, author = {M. Nowak and M. Jesionek and P. Szperlich and J. Szala and T. Rzychoń and D. Stróż}, url = {http://www.sciencedirect.com/science/article/pii/S1350417709000431}, doi = {10.1016/j.ultsonch.2009.03.007}, issn = {1350-4177}, year = {2009}, date = {2009-01-01}, journal = {Ultrasonics Sonochemistry}, volume = {16}, number = {6}, pages = {800 - 804}, abstract = {This paper presents for the first time the nanocrystalline, semiconducting ferroelectrics antimony sulfoiodide (SbSI) grown in multiwalled carbon nanotubes (CNTs). It was prepared sonochemically using elemental Sb, S and I in the presence of methanol under ultrasonic irradiation (35kHz, 2.6W/cm2) at 323K for 3h. The CNTs filled with SbSI were characterized by using techniques such as powder X-ray diffraction, scanning electron microscopy, energy dispersive X-ray analysis, high-resolution transmission electron microscopy, selected area electron diffraction, and optical diffuse reflection spectroscopy. These investigations exhibit that the SbSI filling the CNTs is single crystalline in nature and in the form of nanowires. It has indirect forbidden energy band gap EgIf=1.871(1)eV.}, keywords = {}, pubstate = {published}, tppubtype = {article} } This paper presents for the first time the nanocrystalline, semiconducting ferroelectrics antimony sulfoiodide (SbSI) grown in multiwalled carbon nanotubes (CNTs). It was prepared sonochemically using elemental Sb, S and I in the presence of methanol under ultrasonic irradiation (35kHz, 2.6W/cm2) at 323K for 3h. The CNTs filled with SbSI were characterized by using techniques such as powder X-ray diffraction, scanning electron microscopy, energy dispersive X-ray analysis, high-resolution transmission electron microscopy, selected area electron diffraction, and optical diffuse reflection spectroscopy. These investigations exhibit that the SbSI filling the CNTs is single crystalline in nature and in the form of nanowires. It has indirect forbidden energy band gap EgIf=1.871(1)eV. |
Nowak, M; Kauch, B; Szperlich, P; Jesionek, M; Kępińska, M; Bober, Ł; Szala, J; Moskal, G; Rzychoń, T; Stróż, D Sonochemical preparation of SbSeI gel Journal Article Ultrasonics Sonochemistry, 16 (4), pp. 546 - 551, 2009, ISSN: 1350-4177. @article{Nowak2009546, title = {Sonochemical preparation of SbSeI gel}, author = {M. Nowak and B. Kauch and P. Szperlich and M. Jesionek and M. Kępińska and Ł. Bober and J. Szala and G. Moskal and T. Rzychoń and D. Stróż}, url = {http://www.sciencedirect.com/science/article/pii/S1350417709000029}, doi = {10.1016/j.ultsonch.2009.01.003}, issn = {1350-4177}, year = {2009}, date = {2009-01-01}, journal = {Ultrasonics Sonochemistry}, volume = {16}, number = {4}, pages = {546 - 551}, abstract = {A novel sonochemical method for direct preparation of nanocrystalline antimony selenoiodide (SbSeI) has been established. The SbSeI gel was synthesized using elemental Sb, Se, and I in the presence of ethanol under ultrasonic irradiation (35kHz, 2W/cm2) at 50°C for 2h. The product was characterized by using techniques such as powder X-ray diffraction (XRD), scanning electron microscopy (SEM), energy dispersive X-ray analysis (EDAX), high-resolution transmission electron microscopy (HRTEM), selected area electron diffraction (SAED), and optical diffuse reflection spectroscopy (DRS). The SEM and HRTEM investigations exhibit that the as-prepared samples are made up of large quantity nanowires with lateral dimensions of about 20–50 nm and lengths reaching up to several micrometers and single crystalline in nature.}, keywords = {}, pubstate = {published}, tppubtype = {article} } A novel sonochemical method for direct preparation of nanocrystalline antimony selenoiodide (SbSeI) has been established. The SbSeI gel was synthesized using elemental Sb, Se, and I in the presence of ethanol under ultrasonic irradiation (35kHz, 2W/cm2) at 50°C for 2h. The product was characterized by using techniques such as powder X-ray diffraction (XRD), scanning electron microscopy (SEM), energy dispersive X-ray analysis (EDAX), high-resolution transmission electron microscopy (HRTEM), selected area electron diffraction (SAED), and optical diffuse reflection spectroscopy (DRS). The SEM and HRTEM investigations exhibit that the as-prepared samples are made up of large quantity nanowires with lateral dimensions of about 20–50 nm and lengths reaching up to several micrometers and single crystalline in nature. |
Starczewska, A; Wrzalik, R; Nowak, M; Szperlich, P; Jesionek, M; Moskal, G; Rzychoń, T; Szala, J; Stróż, D; Maślanka, P Influence of the solvent on ultrasonically produced SbSI nanowires Journal Article Ultrasonics Sonochemistry, 16 (4), pp. 537 - 545, 2009, ISSN: 1350-4177. @article{Starczewska2009537, title = {Influence of the solvent on ultrasonically produced SbSI nanowires}, author = {A. Starczewska and R. Wrzalik and M. Nowak and P. Szperlich and M. Jesionek and G. Moskal and T. Rzychoń and J. Szala and D. Stróż and P. Maślanka}, url = {http://www.sciencedirect.com/science/article/pii/S1350417708002241}, doi = {10.1016/j.ultsonch.2008.12.010}, issn = {1350-4177}, year = {2009}, date = {2009-01-01}, journal = {Ultrasonics Sonochemistry}, volume = {16}, number = {4}, pages = {537 - 545}, abstract = {The influence of the substitution of methanol in place of ethanol during the ultrasonic production of antimony sulfoiodide (SbSI) nanowires is presented. The new technology is faster and more efficient at temperatures greater than 314K. The products were characterized by using techniques such as powder X-ray diffraction (XRD), scanning electron microscopy (SEM), energy dispersive X-ray analysis (EDXA), high-resolution transmission electron microscopy (HRTEM), selected area electron diffraction (SAED), optical diffuse reflection spectroscopy (DRS) and IR spectroscopy. The coexistence of Pna21 (ferroelectric) and Pnam (paraelectric) phases at 298K was observed in the SbSI nanowires produced in methanol. The methanol decomposes during the sonication or due to the adsorption process on SbSI nanowires.}, keywords = {}, pubstate = {published}, tppubtype = {article} } The influence of the substitution of methanol in place of ethanol during the ultrasonic production of antimony sulfoiodide (SbSI) nanowires is presented. The new technology is faster and more efficient at temperatures greater than 314K. The products were characterized by using techniques such as powder X-ray diffraction (XRD), scanning electron microscopy (SEM), energy dispersive X-ray analysis (EDXA), high-resolution transmission electron microscopy (HRTEM), selected area electron diffraction (SAED), optical diffuse reflection spectroscopy (DRS) and IR spectroscopy. The coexistence of Pna21 (ferroelectric) and Pnam (paraelectric) phases at 298K was observed in the SbSI nanowires produced in methanol. The methanol decomposes during the sonication or due to the adsorption process on SbSI nanowires. |
Kępińska, M; Nowak, M; Duka, P; Kauch, B Spectrogoniometric determination of refractive indices of GaSe Journal Article Thin Solid Films, 517 (13), pp. 3792 - 3796, 2009, ISSN: 0040-6090. @article{Kępińska20093792, title = {Spectrogoniometric determination of refractive indices of GaSe}, author = {M. Kępińska and M. Nowak and P. Duka and B. Kauch}, url = {http://www.sciencedirect.com/science/article/pii/S0040609009000716}, doi = {http://dx.doi.org/10.1016/j.tsf.2009.01.069}, issn = {0040-6090}, year = {2009}, date = {2009-01-01}, journal = {Thin Solid Films}, volume = {517}, number = {13}, pages = {3792 - 3796}, abstract = {A simple interference spectroscopy technique of determining real parts of refractive indices in thin isotropic or anisotropic films is presented. This method is based on the evaluation of the orders of extrema in interference spectra of optical transmittance and/or reflectance measured for various angles of light incidence. It also makes possible to determine thickness of the investigated sample. This method of investigations was used to determine the parameters of gallium selenide (GaSe). The determined spectral characteristics of ordinary and extraordinary refractive indices of GaSe are compared with the data presented in literature by other authors.}, keywords = {}, pubstate = {published}, tppubtype = {article} } A simple interference spectroscopy technique of determining real parts of refractive indices in thin isotropic or anisotropic films is presented. This method is based on the evaluation of the orders of extrema in interference spectra of optical transmittance and/or reflectance measured for various angles of light incidence. It also makes possible to determine thickness of the investigated sample. This method of investigations was used to determine the parameters of gallium selenide (GaSe). The determined spectral characteristics of ordinary and extraordinary refractive indices of GaSe are compared with the data presented in literature by other authors. |
Nowak, M; Mroczek, P; Duka, P; Kidawa, A; Szperlich, P; Grabowski, A; Szala, J; Moskal, G Using of textured polycrystalline SbSI in actuators Journal Article Sensors and Actuators A: Physical, 150 (2), pp. 251 - 256, 2009, ISSN: 0924-4247. @article{Nowak2009251, title = {Using of textured polycrystalline SbSI in actuators}, author = {M. Nowak and P. Mroczek and P. Duka and A. Kidawa and P. Szperlich and A. Grabowski and J. Szala and G. Moskal}, url = {http://www.sciencedirect.com/science/article/pii/S0924424709000089}, doi = {http://dx.doi.org/10.1016/j.sna.2009.01.005}, issn = {0924-4247}, year = {2009}, date = {2009-01-01}, journal = {Sensors and Actuators A: Physical}, volume = {150}, number = {2}, pages = {251 - 256}, abstract = {This paper presents the design and fabrication of a light deflector made from textured polycrystalline antimony sulfoiodide (SbSI) obtained by gradient freezing during the rapid quenching from the liquid state. The piezoelectric and electrostriction parameters of the textured polycrystalline SbSI are evaluated from the reflection measurements. First time the electrostrictive constant of this material (4.6(1)x10^−13 m^2/V^2) is reported.}, keywords = {}, pubstate = {published}, tppubtype = {article} } This paper presents the design and fabrication of a light deflector made from textured polycrystalline antimony sulfoiodide (SbSI) obtained by gradient freezing during the rapid quenching from the liquid state. The piezoelectric and electrostriction parameters of the textured polycrystalline SbSI are evaluated from the reflection measurements. First time the electrostrictive constant of this material (4.6(1)x10^−13 m^2/V^2) is reported. |
Nowak, M; Talik, E; Szperlich, P; Stróż, D XPS analysis of sonochemically prepared SbSI ethanogel Journal Article Applied Surface Science, 255 (17), pp. 7689 - 7694, 2009, ISSN: 0169-4332. @article{Nowak20097689, title = {XPS analysis of sonochemically prepared SbSI ethanogel}, author = {M. Nowak and E. Talik and P. Szperlich and D. Stróż}, url = {http://www.sciencedirect.com/science/article/pii/S0169433209005200}, doi = {http://dx.doi.org/10.1016/j.apsusc.2009.04.138}, issn = {0169-4332}, year = {2009}, date = {2009-01-01}, journal = {Applied Surface Science}, volume = {255}, number = {17}, pages = {7689 - 7694}, abstract = {This paper, for the first time, presents the results of the X-ray photoelectron spectroscopy (XPS) of the valence band and core levels in sonochemically prepared SbSI ethanogel consisting of nanowires. The XPS spectra were measured with monochromatized Al Kα radiation in the energy range of 0–1400 eV at room temperature. It was found that the sonochemically prepared SbSI ethanogel is a p-type semiconductor. The XPS determined composition of this material suggests the existence of antimony subiodide at surfaces of SbSI nanowires. The chemical shifts in SbSI ethanogel for the Sb, I and S states are reported. Experimentally obtained binding energies are compared with the results reported for single crystals of SbSI.}, keywords = {}, pubstate = {published}, tppubtype = {article} } This paper, for the first time, presents the results of the X-ray photoelectron spectroscopy (XPS) of the valence band and core levels in sonochemically prepared SbSI ethanogel consisting of nanowires. The XPS spectra were measured with monochromatized Al Kα radiation in the energy range of 0–1400 eV at room temperature. It was found that the sonochemically prepared SbSI ethanogel is a p-type semiconductor. The XPS determined composition of this material suggests the existence of antimony subiodide at surfaces of SbSI nanowires. The chemical shifts in SbSI ethanogel for the Sb, I and S states are reported. Experimentally obtained binding energies are compared with the results reported for single crystals of SbSI. |
Nowak, M; Kauch, B; Szperlich, P Determination of energy band gap of nanocrystalline SbSI using diffuse reflectance spectroscopy Journal Article Review of Scientific Instruments, 80 (4), pp. -, 2009. @article{:/content/aip/journal/rsi/80/4/10.1063/1.3103603, title = {Determination of energy band gap of nanocrystalline SbSI using diffuse reflectance spectroscopy}, author = {M. Nowak and B. Kauch and P. Szperlich}, url = {http://scitation.aip.org/content/aip/journal/rsi/80/4/10.1063/1.3103603}, doi = {http://dx.doi.org/10.1063/1.3103603}, year = {2009}, date = {2009-01-01}, journal = {Review of Scientific Instruments}, volume = {80}, number = {4}, pages = {-}, abstract = {Twelve methods of determining energy band gap (Eg) of semiconductors using diffuse reflectance spectroscopy have been applied in investigations of sonochemically produced antimony sulfoiodide (SbSI) consisting of nanowires. It has been proved that the best method of determining Eg is based on simultaneous fitting of many mechanisms of absorption to the spectral dependence of Kubelka–Munk function evaluated from the diffuse reflectance data. It allows determining the values of indirect forbidden Eg , the Urbach energy, and the constant absorption/scattering of the examined semiconductor.}, keywords = {}, pubstate = {published}, tppubtype = {article} } Twelve methods of determining energy band gap (Eg) of semiconductors using diffuse reflectance spectroscopy have been applied in investigations of sonochemically produced antimony sulfoiodide (SbSI) consisting of nanowires. It has been proved that the best method of determining Eg is based on simultaneous fitting of many mechanisms of absorption to the spectral dependence of Kubelka–Munk function evaluated from the diffuse reflectance data. It allows determining the values of indirect forbidden Eg , the Urbach energy, and the constant absorption/scattering of the examined semiconductor. |
Szperlich, P; Nowak, M; Bober, Ł; Szala, J; Stróż, D Ferroelectric properties of ultrasonochemically prepared SbSI ethanogel Journal Article Ultrasonics Sonochemistry, 16 (3), pp. 398 - 401, 2009, ISSN: 1350-4177. @article{Szperlich2009398, title = {Ferroelectric properties of ultrasonochemically prepared SbSI ethanogel}, author = {P. Szperlich and M. Nowak and Ł. Bober and J. Szala and D. Stróż}, url = {http://www.sciencedirect.com/science/article/pii/S135041770800151X}, doi = {http://dx.doi.org/10.1016/j.ultsonch.2008.09.001}, issn = {1350-4177}, year = {2009}, date = {2009-01-01}, journal = {Ultrasonics Sonochemistry}, volume = {16}, number = {3}, pages = {398 - 401}, abstract = {This article presents for the first time the electrical properties of sonochemically synthesised, high-surface-area SbSI ethanogel made up of large quantity nanowires with lateral dimensions of about 10–50 nm and lengths reaching up to several micrometers. The composition, morphology, dimensions, microstructures, and optical energy gap of the new form of SbSI were characterized. This material is a semiconducting ferroelectric as in the case of bulk SbSI crystals. The maximum of dielectric constant ε = 1.6 × 104 is observed at Tc = 292(1) K. The activation energies in temperature dependences of electric conductivity of SbSI ethanogel are different for ferroelectric and paraelectric phases during heating and cooling of the sample.}, keywords = {}, pubstate = {published}, tppubtype = {article} } This article presents for the first time the electrical properties of sonochemically synthesised, high-surface-area SbSI ethanogel made up of large quantity nanowires with lateral dimensions of about 10–50 nm and lengths reaching up to several micrometers. The composition, morphology, dimensions, microstructures, and optical energy gap of the new form of SbSI were characterized. This material is a semiconducting ferroelectric as in the case of bulk SbSI crystals. The maximum of dielectric constant ε = 1.6 × 104 is observed at Tc = 292(1) K. The activation energies in temperature dependences of electric conductivity of SbSI ethanogel are different for ferroelectric and paraelectric phases during heating and cooling of the sample. |
2008 |
Starczewska, A; Wrzalik, R; Nowak, M; Szperlich, P; Bober, Ł; Szala, J; Stróż, D; Czechowicz, D Infrared spectroscopy of ferroelectric nanowires of antimony sulfoiodide Journal Article Infrared Physics & Technology, 51 (4), pp. 307 - 315, 2008, ISSN: 1350-4495. @article{Starczewska2008307, title = {Infrared spectroscopy of ferroelectric nanowires of antimony sulfoiodide}, author = {A. Starczewska and R. Wrzalik and M. Nowak and P. Szperlich and Ł. Bober and J. Szala and D. Stróż and D. Czechowicz}, url = {http://www.sciencedirect.com/science/article/pii/S1350449507000928}, doi = {http://dx.doi.org/10.1016/j.infrared.2007.09.004}, issn = {1350-4495}, year = {2008}, date = {2008-01-01}, journal = {Infrared Physics & Technology}, volume = {51}, number = {4}, pages = {307 - 315}, abstract = {For the first time the infrared absorbance of the ultrasonically fabricated nanowires of antimony sulfoiodide (SbSI) has been measured from 750 cm−1 to 4000−1 cm. The SEM and HRTEM investigations exhibit that the as-prepared SbSI ethanogel is made up of large quantity nanowires with diameters of about 10–50 nm and lengths reaching up to several μm and single-crystalline in nature. The IR measurements have been performed on as-prepared, dried and postannealed samples. The obtained results have been compared with the results of IR investigations of powdered single crystals of SbSI. One of the features of the sonochemically fabricated SbSI nanowires is the strong adsorption of ethanol, ethoxide species, ethylene and water.}, keywords = {}, pubstate = {published}, tppubtype = {article} } For the first time the infrared absorbance of the ultrasonically fabricated nanowires of antimony sulfoiodide (SbSI) has been measured from 750 cm−1 to 4000−1 cm. The SEM and HRTEM investigations exhibit that the as-prepared SbSI ethanogel is made up of large quantity nanowires with diameters of about 10–50 nm and lengths reaching up to several μm and single-crystalline in nature. The IR measurements have been performed on as-prepared, dried and postannealed samples. The obtained results have been compared with the results of IR investigations of powdered single crystals of SbSI. One of the features of the sonochemically fabricated SbSI nanowires is the strong adsorption of ethanol, ethoxide species, ethylene and water. |
Nowak, M; Szperlich, P; Bober, Ł; Szala, J; Moskal, G; Stróż, D Sonochemical preparation of SbSI gel Journal Article Ultrasonics Sonochemistry, 15 (5), pp. 709 - 716, 2008, ISSN: 1350-4177. @article{Nowak2008709, title = {Sonochemical preparation of SbSI gel}, author = {M. Nowak and P. Szperlich and Ł. Bober and J. Szala and G. Moskal and D. Stróż}, url = {http://www.sciencedirect.com/science/article/pii/S1350417707001290}, doi = {http://dx.doi.org/10.1016/j.ultsonch.2007.09.003}, issn = {1350-4177}, year = {2008}, date = {2008-01-01}, journal = {Ultrasonics Sonochemistry}, volume = {15}, number = {5}, pages = {709 - 716}, abstract = {A novel sonochemical method for direct preparation of nanocrystalline antimony sulfoiodide (SbSI) has been established. The SbSI gel was synthesized using elemental Sb, S and I in the presence of ethanol under ultrasonic irradiation (35 kHz, 2 W/cm2) at 50 °C for 2 h. The products were characterized by using techniques such as powder X-ray diffraction (XRD), scanning electron microscopy (SEM), energy dispersive X-ray analysis (EDAX), high-resolution transmission electron microscopy (HRTEM), selected area electron diffraction (SAED), and optical diffuse reflection spectroscopy (DRS). The SEM and HRTEM investigations exhibit that the as-prepared samples are made up of large quantity nanowires with diameters of about 10–50 nm and lengths reaching up to several micrometers and single-crystalline in nature.}, keywords = {}, pubstate = {published}, tppubtype = {article} } A novel sonochemical method for direct preparation of nanocrystalline antimony sulfoiodide (SbSI) has been established. The SbSI gel was synthesized using elemental Sb, S and I in the presence of ethanol under ultrasonic irradiation (35 kHz, 2 W/cm2) at 50 °C for 2 h. The products were characterized by using techniques such as powder X-ray diffraction (XRD), scanning electron microscopy (SEM), energy dispersive X-ray analysis (EDAX), high-resolution transmission electron microscopy (HRTEM), selected area electron diffraction (SAED), and optical diffuse reflection spectroscopy (DRS). The SEM and HRTEM investigations exhibit that the as-prepared samples are made up of large quantity nanowires with diameters of about 10–50 nm and lengths reaching up to several micrometers and single-crystalline in nature. |
2007 |
Szałajko, M; Nowak, M The influence of light intensity on surface recombination in GaS single crystals Journal Article Applied Surface Science, 253 (7), pp. 3636 - 3641, 2007, ISSN: 0169-4332. @article{Szałajko20073636, title = {The influence of light intensity on surface recombination in GaS single crystals}, author = {M. Szałajko and M. Nowak}, url = {http://www.sciencedirect.com/science/article/pii/S0169433206010361}, doi = {http://dx.doi.org/10.1016/j.apsusc.2006.07.073}, issn = {0169-4332}, year = {2007}, date = {2007-01-01}, journal = {Applied Surface Science}, volume = {253}, number = {7}, pages = {3636 - 3641}, abstract = {Gallium sulphide (GaS) is a layer structure semiconductor with relatively wide energy gap (Eg (295 K) = 2.5 eV and Eg (80 K) = 2.62 eV). It has potential applications in some areas of optoelectronics. This paper presents the investigations of the influence of light intensity on surface recombination velocity of charge carriers in GaS single crystals. To attain this purpose spectral dependences (between 420 and 550 nm) of absorption coefficients, reflectivity coefficients and photoconductivity were measured in vacuum. The investigations were performed for various light intensities in several temperatures from 80 to 333 K. The least square method was applied to fit the theoretical dependences of photoconductivity on wavelength and intensity of illumination at these temperatures. From the fittings the temperature and light intensity dependences of surface recombination velocity and bulk lifetime of charge carriers were obtained.}, keywords = {}, pubstate = {published}, tppubtype = {article} } Gallium sulphide (GaS) is a layer structure semiconductor with relatively wide energy gap (Eg (295 K) = 2.5 eV and Eg (80 K) = 2.62 eV). It has potential applications in some areas of optoelectronics. This paper presents the investigations of the influence of light intensity on surface recombination velocity of charge carriers in GaS single crystals. To attain this purpose spectral dependences (between 420 and 550 nm) of absorption coefficients, reflectivity coefficients and photoconductivity were measured in vacuum. The investigations were performed for various light intensities in several temperatures from 80 to 333 K. The least square method was applied to fit the theoretical dependences of photoconductivity on wavelength and intensity of illumination at these temperatures. From the fittings the temperature and light intensity dependences of surface recombination velocity and bulk lifetime of charge carriers were obtained. |
Szałajko, M; Nowak, M Quantum efficiency coefficient for photogeneration of carriers in gallium sulphide single crystals Journal Article Journal of Physics: Condensed Matter, 19 (19), pp. 196210, 2007. @article{0953-8984-19-19-196210, title = {Quantum efficiency coefficient for photogeneration of carriers in gallium sulphide single crystals}, author = {M. Szałajko and M. Nowak}, url = {http://stacks.iop.org/0953-8984/19/i=19/a=196210}, doi = {10.1088/0953-8984/19/19/196210}, year = {2007}, date = {2007-01-01}, journal = {Journal of Physics: Condensed Matter}, volume = {19}, number = {19}, pages = {196210}, abstract = {This paper presents investigations of the quantum efficiency coefficient for the photogeneration of carriers in gallium sulphide (GaS) single crystals. Therefore the spectral dependences (between 420 and 550 nm) of photoconductivity (σ PC ) were measured for temperatures from 80 to 333 K and for different light intensities. Since σ PC depends on the absorption and reflection coefficients, these parameters were determined in the same range of temperatures. The least-squares method was applied to fit the experimental σ PC data with appropriate theoretical dependence. From this fitting, spectral dependences of quantum efficiency coefficients for different temperatures and different light intensities were obtained. A comparison of the values of absorption coefficient obtained from the measurements of optical transmittance and from evaluation of the quantum efficiency coefficient is presented.}, keywords = {}, pubstate = {published}, tppubtype = {article} } This paper presents investigations of the quantum efficiency coefficient for the photogeneration of carriers in gallium sulphide (GaS) single crystals. Therefore the spectral dependences (between 420 and 550 nm) of photoconductivity (σ PC ) were measured for temperatures from 80 to 333 K and for different light intensities. Since σ PC depends on the absorption and reflection coefficients, these parameters were determined in the same range of temperatures. The least-squares method was applied to fit the experimental σ PC data with appropriate theoretical dependence. From this fitting, spectral dependences of quantum efficiency coefficients for different temperatures and different light intensities were obtained. A comparison of the values of absorption coefficient obtained from the measurements of optical transmittance and from evaluation of the quantum efficiency coefficient is presented. |
2006 |
Grabowski, A; Sleziona, J; Nowak, M Laser cutting of AlSi-alloy/SiCp composite: modelling of the cut kerf geometry 2006. @proceeding{doi:10.1117/12.726548, title = {Laser cutting of AlSi-alloy/SiCp composite: modelling of the cut kerf geometry}, author = {A. Grabowski and J. Sleziona and M. Nowak}, url = {http://dx.doi.org/10.1117/12.726548}, doi = {10.1117/12.726548}, year = {2006}, date = {2006-01-01}, journal = {Proc. SPIE}, volume = {6598}, pages = {65980H-65980H-5}, abstract = {This paper presents a physical model characterizing the geometry of gas-assisted laser cutting of the AlSi-alloy/SiCp composite. In the model, a lot of relevant parameters that describe the inhomogeneous optical and thermophysical properties of AlSi-alloy/SiCp have been used. Numerical evaluations of this model give some explanations of "double slope" formation mechanism during laser cutting of the AlSi-alloy/SiCp. The theoretical results are compared with experimental data. It is found that increasing laser beam scanning speed increases the slope of cutting front.}, keywords = {}, pubstate = {published}, tppubtype = {proceeding} } This paper presents a physical model characterizing the geometry of gas-assisted laser cutting of the AlSi-alloy/SiCp composite. In the model, a lot of relevant parameters that describe the inhomogeneous optical and thermophysical properties of AlSi-alloy/SiCp have been used. Numerical evaluations of this model give some explanations of "double slope" formation mechanism during laser cutting of the AlSi-alloy/SiCp. The theoretical results are compared with experimental data. It is found that increasing laser beam scanning speed increases the slope of cutting front. |
Michalewicz, A; Nowak, M; Kępińska, M Differences between surface and bulk refractive indices of a-InxSe1−x Journal Article Applied Surface Science, 252 (21), pp. 7743 - 7747, 2006, ISSN: 0169-4332, (Proceedings of the 4th International Workshop on Semiconductor Surface Passivation SSP'05 SI). @article{Michalewicz20067743, title = {Differences between surface and bulk refractive indices of a-InxSe1−x}, author = {A. Michalewicz and M. Nowak and M. Kępińska}, url = {http://www.sciencedirect.com/science/article/pii/S0169433206003588}, doi = {http://dx.doi.org/10.1016/j.apsusc.2006.03.067}, issn = {0169-4332}, year = {2006}, date = {2006-01-01}, journal = {Applied Surface Science}, volume = {252}, number = {21}, pages = {7743 - 7747}, abstract = {Thin films of amorphous indium selenide compounds (a-InxSe1−x) are important, e.g. for photovoltaics. The feature of merit in such applications is also the real part of refractive index n of this material. The data on n in literature are divergent. In this paper, the results of investigations on n in the bulk as well as in the interface layers of thin films of a-InxSe1−x are presented. The measurements had been performed using optical transmittance and reflectance in spectral range from 1.24 to 1.96 eV of linear polarized radiation that hit the samples with angles of incidence from 0° to 80°. Investigations had been done for sample temperatures from 80 to 340 K. It was found that the refractive index for areas at the free surface nf is bigger than the refractive index nb at the interface of thin film–substrate. The averaged over thin film thickness value of real part refractive index View the MathML source have the biggest value in all spectral range. Values of these coefficients increase with increasing the temperature.}, note = {Proceedings of the 4th International Workshop on Semiconductor Surface Passivation SSP'05 SI}, keywords = {}, pubstate = {published}, tppubtype = {article} } Thin films of amorphous indium selenide compounds (a-InxSe1−x) are important, e.g. for photovoltaics. The feature of merit in such applications is also the real part of refractive index n of this material. The data on n in literature are divergent. In this paper, the results of investigations on n in the bulk as well as in the interface layers of thin films of a-InxSe1−x are presented. The measurements had been performed using optical transmittance and reflectance in spectral range from 1.24 to 1.96 eV of linear polarized radiation that hit the samples with angles of incidence from 0° to 80°. Investigations had been done for sample temperatures from 80 to 340 K. It was found that the refractive index for areas at the free surface nf is bigger than the refractive index nb at the interface of thin film–substrate. The averaged over thin film thickness value of real part refractive index View the MathML source have the biggest value in all spectral range. Values of these coefficients increase with increasing the temperature. |
Michalewicz, A; Nowak, M; Kępińska, M Temperature dependence of the energy gap of InxSe1–x compounds Journal Article Physica Status Solidi B Basic Research, 243 , pp. 685-689, 2006. @article{2006PSSBR.243..685M, title = {Temperature dependence of the energy gap of InxSe1–x compounds}, author = {A. Michalewicz and M. Nowak and M. Kępińska}, url = {http://onlinelibrary.wiley.com/doi/10.1002/pssb.200541055/epdf}, doi = {10.1002/pssb.200541055}, year = {2006}, date = {2006-01-01}, journal = {Physica Status Solidi B Basic Research}, volume = {243}, pages = {685-689}, abstract = {The optical absorption for photon energies of InxSe1–x thin films was used to determine the variation of the energy gap and the Urbach energy as a function of temperature in the range from 80 to 340 K at photon energies hν = 1.24 to 2.6 eV. The data were analyzed using the Varshni relation [Physica 34, 149 (1967)] for the temperature dependence of semiconductor band gaps. The formula by Yang et al. [cf., e.g., J. Phys. Chem. Solids 65, 1015 (2004)] for the temperature dependence of the energy width of the Urbach absorption edge was also used. }, keywords = {}, pubstate = {published}, tppubtype = {article} } The optical absorption for photon energies of InxSe1–x thin films was used to determine the variation of the energy gap and the Urbach energy as a function of temperature in the range from 80 to 340 K at photon energies hν = 1.24 to 2.6 eV. The data were analyzed using the Varshni relation [Physica 34, 149 (1967)] for the temperature dependence of semiconductor band gaps. The formula by Yang et al. [cf., e.g., J. Phys. Chem. Solids 65, 1015 (2004)] for the temperature dependence of the energy width of the Urbach absorption edge was also used. |
Bodzenta, J; Burak, B; Nowak, M; Pyka, M; Szałajko, M; Tanasiewicz, M Measurement of the thermal diffusivity of dental filling materials using modified Ångström's method Journal Article Dental Materials, 22 (7), pp. 617 - 621, 2006, ISSN: 0109-5641. @article{Bodzenta2006617, title = {Measurement of the thermal diffusivity of dental filling materials using modified Ångström's method}, author = {J. Bodzenta and B. Burak and M. Nowak and M. Pyka and M. Szałajko and M. Tanasiewicz}, url = {http://www.sciencedirect.com/science/article/pii/S010956410500237X}, doi = {http://dx.doi.org/10.1016/j.dental.2005.05.016}, issn = {0109-5641}, year = {2006}, date = {2006-01-01}, journal = {Dental Materials}, volume = {22}, number = {7}, pages = {617 - 621}, abstract = {Summary Objectives A new measuring technique for the determination of thermal diffusivity is proposed. Using this technique, the thermal properties of a few different dental filling materials were measured. Methods The proposed method for measurement of thermal diffusivity is based on the classical Ångström's method. The method exploits the propagation of a plane thermal wave generated by a Peltier's device in a cylindrical sample along its axis. The thermal diffusivity of the sample is calculated from the phase difference between harmonic components of temperatures measured at sample surfaces, perpendicular to the direction of thermal wave propagation. The estimated accuracy of measurement is typically about 10% for samples with low thermal diffusivity. The proposed method was used for the determination of thermal diffusivities of Achatit Bichromatic, Charisma and Dentimet dental filling materials. Results The measured thermal diffusivities were: 0.295(0.020)×10−6 m2 s−1 for Achatit Bichromatic, 0.321(0.015)×10−6 m2 s−1 for Charisma and 1.70(0.12)×10−6 m2 s−1 for Dentimet. The thermal conductivities of these materials were also estimated. The results were compared with values obtained from independent constant flux measurements with marble as a reference material. Significance There are no standard techniques for the determination of the thermal properties of dental filling materials. Moreover, it is difficult to find the thermal diffusivity and the thermal conductivity of many of them. The method proposed in this paper allows the simple and accurate measurement of thermal diffusivity. Thermal parameters of dental filling materials should be compatible with the parameters of human teeth. Lack of thermal compatibility can cause not only patient discomfort but also mechanical stresses leading to microcracks.}, keywords = {}, pubstate = {published}, tppubtype = {article} } Summary Objectives A new measuring technique for the determination of thermal diffusivity is proposed. Using this technique, the thermal properties of a few different dental filling materials were measured. Methods The proposed method for measurement of thermal diffusivity is based on the classical Ångström's method. The method exploits the propagation of a plane thermal wave generated by a Peltier's device in a cylindrical sample along its axis. The thermal diffusivity of the sample is calculated from the phase difference between harmonic components of temperatures measured at sample surfaces, perpendicular to the direction of thermal wave propagation. The estimated accuracy of measurement is typically about 10% for samples with low thermal diffusivity. The proposed method was used for the determination of thermal diffusivities of Achatit Bichromatic, Charisma and Dentimet dental filling materials. Results The measured thermal diffusivities were: 0.295(0.020)×10−6 m2 s−1 for Achatit Bichromatic, 0.321(0.015)×10−6 m2 s−1 for Charisma and 1.70(0.12)×10−6 m2 s−1 for Dentimet. The thermal conductivities of these materials were also estimated. The results were compared with values obtained from independent constant flux measurements with marble as a reference material. Significance There are no standard techniques for the determination of the thermal properties of dental filling materials. Moreover, it is difficult to find the thermal diffusivity and the thermal conductivity of many of them. The method proposed in this paper allows the simple and accurate measurement of thermal diffusivity. Thermal parameters of dental filling materials should be compatible with the parameters of human teeth. Lack of thermal compatibility can cause not only patient discomfort but also mechanical stresses leading to microcracks. |
