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Stanowisko: Profesor PŚ Kierownik Zakładu Telefon: +48 32 603 4188 Email: Anna.Starczewska@polsl.pl Adres: ul. Krasińskiego 8, p.162 PL-40-019 Katowice |
Zainteresowania naukowe:
- Kryształy fotoniczne, opale, opale odwrotne
- Spektroskopia impedancji materiałów półprzewodnikowych, kompozytów, nanomateriałów
- Badania własności elektrycznych, fotoelektrycznych i optycznych
- Nanosensory gazów
- Urządzenia fotowoltaiczne
- Programowanie w środowisku LabVIEW
Publikacje:
2019 |
Jesionek, M; Toroń, B; Szperlich, P; Biniaś, W; Biniaś, D; Rabiej, S; Starczewska, A; Nowak, M; Kępińska, M; Dec, J Fabrication of a new PVDF/SbSI nanowire composite for smart wearable textile Journal Article Polymer, 180 , pp. 121729, 2019, ISSN: 0032-3861. @article{JESIONEK2019121729, title = {Fabrication of a new PVDF/SbSI nanowire composite for smart wearable textile}, author = {M. Jesionek and B. Toroń and P. Szperlich and W. Biniaś and D. Biniaś and S. Rabiej and A. Starczewska and M. Nowak and M. Kępińska and J. Dec}, url = {http://www.sciencedirect.com/science/article/pii/S0032386119307359}, doi = {https://doi.org/10.1016/j.polymer.2019.121729}, issn = {0032-3861}, year = {2019}, date = {2019-01-01}, journal = {Polymer}, volume = {180}, pages = {121729}, abstract = {In this paper, a new fabrication method for Polyvinylidene fluoride/SbSI nanowire composite is presented. Polyvinylidene fluoride (PVDF) is a specialist thermoplastic fluoropolymer with very good mechanical, chemical and thermal properties. Additionally, PVDF shows piezoelectric, pyroelectric, and ferroelectric properties. Antimony sulfoiodide (SbSI) nanowires (lateral dimensions of 10 nm–100 nm and lengths up to a few micrometres) are also piezoelectric compound with one of the best electromechanical and piezoelectric coefficient (k33 = 0.9 and dV = 0.9 × 10−9 C/N). SbSI nanowires have been added to improve piezoelectric properties of PVDF. The prepared SbSI nanowires were bound with PVDF in a mass ratio of 15:85, which was the fibre formation input with the addition of SbSI nanowires at different take-up velocities. An active layer of nanogenerator was prepared from the fabricated PVDF/SbSI nanowire composite. The preliminary investigations of compression and vibrations, allowed for the determination of the composites open circuit voltage 1.2 Vp-p and 2.5 Vp-p, respectively. Generated powers under impact have reached values PS = 408.8(52) μW/cm2 and PV = 3.464(53) mW/cm3, respectively.}, keywords = {}, pubstate = {published}, tppubtype = {article} } In this paper, a new fabrication method for Polyvinylidene fluoride/SbSI nanowire composite is presented. Polyvinylidene fluoride (PVDF) is a specialist thermoplastic fluoropolymer with very good mechanical, chemical and thermal properties. Additionally, PVDF shows piezoelectric, pyroelectric, and ferroelectric properties. Antimony sulfoiodide (SbSI) nanowires (lateral dimensions of 10 nm–100 nm and lengths up to a few micrometres) are also piezoelectric compound with one of the best electromechanical and piezoelectric coefficient (k33 = 0.9 and dV = 0.9 × 10−9 C/N). SbSI nanowires have been added to improve piezoelectric properties of PVDF. The prepared SbSI nanowires were bound with PVDF in a mass ratio of 15:85, which was the fibre formation input with the addition of SbSI nanowires at different take-up velocities. An active layer of nanogenerator was prepared from the fabricated PVDF/SbSI nanowire composite. The preliminary investigations of compression and vibrations, allowed for the determination of the composites open circuit voltage 1.2 Vp-p and 2.5 Vp-p, respectively. Generated powers under impact have reached values PS = 408.8(52) μW/cm2 and PV = 3.464(53) mW/cm3, respectively. |
2018 |
Nowak, M; Jesionek, M; Solecka, B; Szperlich, P; Duka, P; Starczewska, A Contactless photomagnetoelectric investigations of 2D semiconductors Journal Article Beilstein Journal of Nanotechnology, 9 , pp. 2741-2749, 2018, ISSN: 2190-4286. @article{Nowak2018, title = {Contactless photomagnetoelectric investigations of 2D semiconductors}, author = {M. Nowak and M. Jesionek and B. Solecka and P. Szperlich and P. Duka and A. Starczewska}, url = {https://www.beilstein-journals.org/bjnano/articles/9/256}, doi = {10.3762/bjnano.9.256}, issn = {2190-4286}, year = {2018}, date = {2018-01-01}, journal = {Beilstein Journal of Nanotechnology}, volume = {9}, pages = {2741-2749}, abstract = {Background: Applications of two-dimensional (2D) materials in electronic devices require the development of appropriate measuring methods for determining their typical semiconductor parameters, i.e., mobility and carrier lifetime. Among these methods, contactless techniques and mobility extraction methods based on field-effect measurements are of great importance. Results: Here we show a contactless method for determining these parameters in 2D semiconductors that is based on the photomagnetoelectric (PME) effect (also known as the photoelectromagnetic effect). We present calculated dependences of the PME magnetic moment, evoked in 2D Corbino configuration, on the magnetic field as well as on the intensity and spatial distribution of illumination. The theoretical predictions agree with the results of the contactless investigations performed on non-suspended single-layer graphene. We use the contactless PME method for determining the dependence of carrier mobility on the concentration of electrons and holes induced by a back-gate voltage. Conclusion: The presented contactless PME method, used in Corbino geometry, is complementary to the mobility extraction methods based on field-effect measurements. It can be used for determining the mobility and diffusion length of carriers in different 2D materials. Keywords: carrier mobility; contactless investigations; graphene; photomagnetoelectric effect; 2D materials}, keywords = {}, pubstate = {published}, tppubtype = {article} } Background: Applications of two-dimensional (2D) materials in electronic devices require the development of appropriate measuring methods for determining their typical semiconductor parameters, i.e., mobility and carrier lifetime. Among these methods, contactless techniques and mobility extraction methods based on field-effect measurements are of great importance. Results: Here we show a contactless method for determining these parameters in 2D semiconductors that is based on the photomagnetoelectric (PME) effect (also known as the photoelectromagnetic effect). We present calculated dependences of the PME magnetic moment, evoked in 2D Corbino configuration, on the magnetic field as well as on the intensity and spatial distribution of illumination. The theoretical predictions agree with the results of the contactless investigations performed on non-suspended single-layer graphene. We use the contactless PME method for determining the dependence of carrier mobility on the concentration of electrons and holes induced by a back-gate voltage. Conclusion: The presented contactless PME method, used in Corbino geometry, is complementary to the mobility extraction methods based on field-effect measurements. It can be used for determining the mobility and diffusion length of carriers in different 2D materials. Keywords: carrier mobility; contactless investigations; graphene; photomagnetoelectric effect; 2D materials |
2016 |
Mistewicz, K; Nowak, M; Starczewska, A; Jesionek, M; Rzychoń, T; Wrzalik, R; Guiseppi-Elie, A Determination of electrical conductivity type of SbSI nanowires Journal Article Materials Letters, 182 , pp. 78 - 80, 2016, ISSN: 0167-577X. @article{Mistewicz201678, title = {Determination of electrical conductivity type of SbSI nanowires}, author = {K. Mistewicz and M. Nowak and A. Starczewska and M. Jesionek and T. Rzychoń and R. Wrzalik and A. Guiseppi-Elie}, url = {//www.sciencedirect.com/science/article/pii/S0167577X16310291}, doi = {http://dx.doi.org/10.1016/j.matlet.2016.06.073}, issn = {0167-577X}, year = {2016}, date = {2016-01-01}, journal = {Materials Letters}, volume = {182}, pages = {78 - 80}, abstract = {Abstract This paper presents for the first time qualitatively different DC electrical responses of antimony sulfoiodide (SbSI) nanowires on hydrogen and oxygen. The effect produced by adsorbed gas on the electrical conductance can be used for determination of electrical conductivity type of investigated nanomaterials. Electrical conductance of the SbSI nanowires increases due to adsorption of O2 molecules (known as electron acceptors) and decreases due to adsorption of H2 molecules (known as electron donors). Such behavior proves the p-type electrical conductivity of investigated SbSI nanowires.}, keywords = {}, pubstate = {published}, tppubtype = {article} } Abstract This paper presents for the first time qualitatively different DC electrical responses of antimony sulfoiodide (SbSI) nanowires on hydrogen and oxygen. The effect produced by adsorbed gas on the electrical conductance can be used for determination of electrical conductivity type of investigated nanomaterials. Electrical conductance of the SbSI nanowires increases due to adsorption of O2 molecules (known as electron acceptors) and decreases due to adsorption of H2 molecules (known as electron donors). Such behavior proves the p-type electrical conductivity of investigated SbSI nanowires. |
2014 |
Kępińska, M; Starczewska, A; Bednarczyk, I; Szala, J; Szperlich, P; Mistewicz, K Fabrication and characterisation of SbI3-opal structures Journal Article Materials Letters, 130 (0), pp. 17 - 20, 2014, ISSN: 0167-577X. @article{Kêpiñska201417, title = {Fabrication and characterisation of SbI3-opal structures}, author = {M. Kępińska and A. Starczewska and I. Bednarczyk and J. Szala and P. Szperlich and K. Mistewicz}, url = {http://www.sciencedirect.com/science/article/pii/S0167577X1400843X}, doi = {http://dx.doi.org/10.1016/j.matlet.2014.05.063}, issn = {0167-577X}, year = {2014}, date = {2014-09-01}, journal = {Materials Letters}, volume = {130}, number = {0}, pages = {17 - 20}, abstract = {Abstract This work is focused on forming opal-antimony triiodide (SbI3) structures with direct SiO2 opal. SbI3 is a semiconductor having relatively high refractive index so potentially is very useful in fabrication of photonic crystal. Additionally, crystalline SbI3 exhibits the second-harmonic generation so obtained structures provide a wide range of opportunities for optoelectronic devices. Presented structures are fabricated by infiltration opal with SbI3 dissolved in ethanol and drying in room temperature. The morphology of the samples was characterized by scanning electron microscopy (SEM). The chemical composition of the samples was analyzed using energy dispersion spectroscopy (EDS). Optical properties were investigated by reflectance spectroscopy for wavelengths from 380 nm to 1050 nm.}, keywords = {}, pubstate = {published}, tppubtype = {article} } Abstract This work is focused on forming opal-antimony triiodide (SbI3) structures with direct SiO2 opal. SbI3 is a semiconductor having relatively high refractive index so potentially is very useful in fabrication of photonic crystal. Additionally, crystalline SbI3 exhibits the second-harmonic generation so obtained structures provide a wide range of opportunities for optoelectronic devices. Presented structures are fabricated by infiltration opal with SbI3 dissolved in ethanol and drying in room temperature. The morphology of the samples was characterized by scanning electron microscopy (SEM). The chemical composition of the samples was analyzed using energy dispersion spectroscopy (EDS). Optical properties were investigated by reflectance spectroscopy for wavelengths from 380 nm to 1050 nm. |
Nowak, M; Mistewicz, K; Nowrot, A; Szperlich, P; Jesionek, M; Starczewska, A Transient characteristics and negative photoconductivity of SbSI humidity sensor Journal Article Sensors and Actuators A: Physical, 210 (0), pp. 32 - 40, 2014, ISSN: 0924-4247. @article{Nowak201432, title = {Transient characteristics and negative photoconductivity of SbSI humidity sensor}, author = {M. Nowak and K. Mistewicz and A. Nowrot and P. Szperlich and M. Jesionek and A. Starczewska}, url = {http://www.sciencedirect.com/science/article/pii/S0924424714000685}, doi = {10.1016/j.sna.2014.02.004}, issn = {0924-4247}, year = {2014}, date = {2014-01-01}, journal = {Sensors and Actuators A: Physical}, volume = {210}, number = {0}, pages = {32 - 40}, abstract = {Abstract This paper presents the influence of water vapor on the photoconductivity of antimony sulfoiodide (SbSI) nanowires obtained sonochemically. It is done to explore the applicability of SbSI photoconductor as a humidity sensor. Character of the response of DC photoconductivity current on the switching on and switching off illumination of SbSI gel depends on relative humidity (RH) of nitrogen environment. While positive photoconductivity is observed for low RH, the negative effect occurs for high RH. The least square fitting of the transient characteristics of photoconductivity allowed to present equivalent photoelectric model of SbSI gel. The changes of the parameters of the model with increasing humidity and illumination intensity are presented. Mechanism of light-induced desorption of H2O from SbSI nanowires’ surface is discussed.}, keywords = {}, pubstate = {published}, tppubtype = {article} } Abstract This paper presents the influence of water vapor on the photoconductivity of antimony sulfoiodide (SbSI) nanowires obtained sonochemically. It is done to explore the applicability of SbSI photoconductor as a humidity sensor. Character of the response of DC photoconductivity current on the switching on and switching off illumination of SbSI gel depends on relative humidity (RH) of nitrogen environment. While positive photoconductivity is observed for low RH, the negative effect occurs for high RH. The least square fitting of the transient characteristics of photoconductivity allowed to present equivalent photoelectric model of SbSI gel. The changes of the parameters of the model with increasing humidity and illumination intensity are presented. Mechanism of light-induced desorption of H2O from SbSI nanowires’ surface is discussed. |
Nowak, M; Nowrot, A; Szperlich, P; Jesionek, M; Kępińska, M; Starczewska, A; Mistewicz, K; Stróż, D; Szala, J; Rzychoń, T; Talik, E; Wrzalik, R Fabrication and characterization of SbSI gel for humidity sensors Journal Article Sensors and Actuators A: Physical, 210 (0), pp. 119 - 130, 2014, ISSN: 0924-4247. @article{Nowak2014119, title = {Fabrication and characterization of SbSI gel for humidity sensors}, author = { M. Nowak and A. Nowrot and P. Szperlich and M. Jesionek and M. Kępińska and A. Starczewska and K. Mistewicz and D. Stróż and J. Szala and T. Rzychoń and E. Talik and R. Wrzalik}, url = {http://www.sciencedirect.com/science/article/pii/S0924424714000764}, doi = {10.1016/j.sna.2014.02.012}, issn = {0924-4247}, year = {2014}, date = {2014-01-01}, journal = {Sensors and Actuators A: Physical}, volume = {210}, number = {0}, pages = {119 - 130}, abstract = {A sonochemical method for direct preparation in water of a gel consisted of nanocrystalline antimony sulfoiodide (SbSI) nanowires is presented for the first time. The product was characterized by using techniques such as powder X-ray diffraction, scanning electron microscopy, energy dispersive X-ray analysis, high-resolution transmission electron microscopy, selected area electron diffraction, X-ray photoelectron spectroscopy, optical diffuse reflection spectroscopy and IR spectroscopy. The electrical properties of the fabricated nanomaterial have been investigated, too. The nanowires are a semiconducting ferroelectric with Curie constant equal C = 1.41(14) × 10^4 K and Curie temperature equal TC = 293.0(2) K. The indirect allowed energy band gap of this material is EgIa = 1.880(2) eV. Such prepared SbSI nanowires have optical and electrical properties suitable for ferroelectric nanosensors.}, keywords = {}, pubstate = {published}, tppubtype = {article} } A sonochemical method for direct preparation in water of a gel consisted of nanocrystalline antimony sulfoiodide (SbSI) nanowires is presented for the first time. The product was characterized by using techniques such as powder X-ray diffraction, scanning electron microscopy, energy dispersive X-ray analysis, high-resolution transmission electron microscopy, selected area electron diffraction, X-ray photoelectron spectroscopy, optical diffuse reflection spectroscopy and IR spectroscopy. The electrical properties of the fabricated nanomaterial have been investigated, too. The nanowires are a semiconducting ferroelectric with Curie constant equal C = 1.41(14) × 10^4 K and Curie temperature equal TC = 293.0(2) K. The indirect allowed energy band gap of this material is EgIa = 1.880(2) eV. Such prepared SbSI nanowires have optical and electrical properties suitable for ferroelectric nanosensors. |
Szperlich, P; Nowak, M; Jesionek, M; Starczewska, A; Mistewicz, K; Szala, J Desorption of Gasses Induced by Ferroelectric Transition in SbSI Nanowires Journal Article Acta Physica Polonica A, 126 (5), pp. 1110-1112, 2014. @article{szperlich2014desorption, title = {Desorption of Gasses Induced by Ferroelectric Transition in SbSI Nanowires}, author = {P. Szperlich and M. Nowak and M. Jesionek and A. Starczewska and K. Mistewicz and J. Szala}, url = {http://przyrbwn.icm.edu.pl/APP/PDF/126/a126z5p15.pdf}, doi = {10.12693/APhysPolA.126.1110}, year = {2014}, date = {2014-01-01}, journal = {Acta Physica Polonica A}, volume = {126}, number = {5}, pages = {1110-1112}, publisher = {Institute of Physics, Polish Academy of Science}, abstract = {For the first time the thermal desorption of H2, N2, O2 and CO2 is presented for antimony sulfoiodide (SbSI) xerogel made up of large quantity nanowires. The desorption has been observed near ferroelectric phase transition established at Tc = 293.0(2) K. The Sievert measurements have shown that the hydrogen uptake is linear function of H2 pressure (when p < 1.1 × 10^5 Pa). The hydrogen storage density in SbSI gel amounted 1.24 × 10^-2 wt% (for p = 1.08 × 10^5 Pa at room temperature).}, keywords = {}, pubstate = {published}, tppubtype = {article} } For the first time the thermal desorption of H2, N2, O2 and CO2 is presented for antimony sulfoiodide (SbSI) xerogel made up of large quantity nanowires. The desorption has been observed near ferroelectric phase transition established at Tc = 293.0(2) K. The Sievert measurements have shown that the hydrogen uptake is linear function of H2 pressure (when p < 1.1 × 10^5 Pa). The hydrogen storage density in SbSI gel amounted 1.24 × 10^-2 wt% (for p = 1.08 × 10^5 Pa at room temperature). |
Starczewska, A; Nowak, M; Szperlich, P; Bednarczyk, I; Mistewicz, K; Kępińska, M; Duka, P Antimony Sulfoiodide as Novel Material for Photonic Crystals Inproceedings Frontiers in Optics 2014, pp. JW3A.28, Optical Society of America, 2014, ISBN: 1-55752-286-3. @inproceedings{Starczewska:14, title = {Antimony Sulfoiodide as Novel Material for Photonic Crystals}, author = {A. Starczewska and M. Nowak and P. Szperlich and I. Bednarczyk and K. Mistewicz and M. Kępińska and P. Duka}, url = {http://www.opticsinfobase.org/abstract.cfm?URI=LS-2014-JW3A.28}, doi = {10.1364/FIO.2014.JW3A.28}, isbn = {1-55752-286-3}, year = {2014}, date = {2014-01-01}, booktitle = {Frontiers in Optics 2014}, journal = {Frontiers in Optics 2014}, pages = {JW3A.28}, publisher = {Optical Society of America}, abstract = {Semiconducting ferroelectrics promise construction of crystals with tuned photonic band gap. Such structures were synthesized by self-assembling SiO2 spheres, followed by melt infiltration with antimony sulfoiodide and the removal of SiO2 spheres by chemical etching.}, keywords = {}, pubstate = {published}, tppubtype = {inproceedings} } Semiconducting ferroelectrics promise construction of crystals with tuned photonic band gap. Such structures were synthesized by self-assembling SiO2 spheres, followed by melt infiltration with antimony sulfoiodide and the removal of SiO2 spheres by chemical etching. |
Kępińska, M; Starczewska, A; Duka, P; Nowak, M; Szperlich, P Optical Properties of SbSI photonic crystals Journal Article Acta Physica Polonica A, 126 (5), pp. 1115-1117, 2014. @article{kkepinska2014optical, title = {Optical Properties of SbSI photonic crystals}, author = {M. Kępińska and A. Starczewska and P. Duka and M. Nowak and P. Szperlich}, url = {http://przyrbwn.icm.edu.pl/APP/PDF/126/a126z5p17.pdf}, doi = {10.12693/APhysPolA.126.1115}, year = {2014}, date = {2014-01-01}, journal = {Acta Physica Polonica A}, volume = {126}, number = {5}, pages = {1115-1117}, publisher = {Institute of Physics, Polish Academy of Science}, abstract = {This paper presents optical properties of SiO2 opals infiltrated with SbSI and inverted SbSI opals for the first time. Registered reflectance spectra exhibit Bragg's peaks connected with photonic band gap. Calculated photonic band structure has been compared with experimental results.}, keywords = {}, pubstate = {published}, tppubtype = {article} } This paper presents optical properties of SiO2 opals infiltrated with SbSI and inverted SbSI opals for the first time. Registered reflectance spectra exhibit Bragg's peaks connected with photonic band gap. Calculated photonic band structure has been compared with experimental results. |
Starczewska, A; Solecka, B; Nowak, M; Szperlich, P Dielectric Properties of SbSI in the Temperature Range of 292-475 K Journal Article Acta Physica Polonica A, 126 (5), pp. 1125–1127, 2014. @article{starczewska2014dielectric, title = {Dielectric Properties of SbSI in the Temperature Range of 292-475 K}, author = {A. Starczewska and B. Solecka and M. Nowak and P. Szperlich}, url = {http://przyrbwn.icm.edu.pl/APP/PDF/126/a126z5p20.pdf}, doi = {10.12693/APhysPolA.126.1125 }, year = {2014}, date = {2014-01-01}, journal = {Acta Physica Polonica A}, volume = {126}, number = {5}, pages = {1125--1127}, publisher = {Institute of Physics, Polish Academy of Science}, abstract = {Methodology of impedance measurements and ferroelectric hysteresis loops observed in temperature range 292-475 K for antimony sulfoiodide (SbSI) grown from vapour phase are discussed. Temperature dependences of spontaneous polarization and coercive field of SbSI crystals are presented.}, keywords = {}, pubstate = {published}, tppubtype = {article} } Methodology of impedance measurements and ferroelectric hysteresis loops observed in temperature range 292-475 K for antimony sulfoiodide (SbSI) grown from vapour phase are discussed. Temperature dependences of spontaneous polarization and coercive field of SbSI crystals are presented. |
Starczewska, A; Szperlich, P; Nowak, M; Bednarczyk, I; Bodzenta, J; Szala, J Fabrication of SbSI Photonic Crystals Journal Article Acta Physica Polonica A, 126 (5), pp. 1118-1120, 2014. @article{starczewska2014fabrication, title = {Fabrication of SbSI Photonic Crystals}, author = {A. Starczewska and P. Szperlich and M. Nowak and I. Bednarczyk and J. Bodzenta and J. Szala}, url = {http://przyrbwn.icm.edu.pl/APP/PDF/126/a126z5p18.pdf}, doi = {10.12693/APhysPolA.126.1118 }, year = {2014}, date = {2014-01-01}, journal = {Acta Physica Polonica A}, volume = {126}, number = {5}, pages = {1118-1120}, publisher = {Institute of Physics, Polish Academy of Science}, abstract = {Semiconducting ferroelectric antimony sulfoiodide (SbSI) photonic crystals were fabricated. The SiO2 nanospheres were synthesized and gravity sedimented to obtain opal matrices. These opals were infiltrated with melted SbSI and etched in HF acid to produce inverted SbSI opals.}, keywords = {}, pubstate = {published}, tppubtype = {article} } Semiconducting ferroelectric antimony sulfoiodide (SbSI) photonic crystals were fabricated. The SiO2 nanospheres were synthesized and gravity sedimented to obtain opal matrices. These opals were infiltrated with melted SbSI and etched in HF acid to produce inverted SbSI opals. |
2013 |
Starczewska, A; Szala, J; Kępińska, M; Nowak, M; Mistewicz, K; Sozańska, M Comparison of the investigations of photonic crystals using SEM and optical technics Journal Article Solid State Phenomena, 197 , pp. 119124, 2013. @article{Starczewska, title = {Comparison of the investigations of photonic crystals using SEM and optical technics}, author = {A. Starczewska and J. Szala and M. Kępińska and M. Nowak and K. Mistewicz and M. Sozańska}, url = {http://www.scientific.net/SSP.197.119}, doi = {10.4028/www.scientific.net/SSP.197.119}, year = {2013}, date = {2013-02-01}, journal = {Solid State Phenomena}, volume = {197}, pages = {119124}, abstract = {All over the world the investigations of nanophotonic structures called photonic crystals (PCs) are performed. These crystals have potential applications in optoelectronics, e.g. optical filters, antireflective surface coatings, lossless frequency selective mirrors. In Institute of Physics at Silesian Technical University the opal photonic crystals consisting of monodisperse spherical particles, that have diameters of several hundred nanometers, are produced using colloidal self-assembly technics. The main aim of this work is the comparison between pieces of information on morphology of photonic crystals that can be obtained from electron microscopy and from the angular characteristics of optical transmittance and reflectance. The morphology of the samples is characterized by scanning electron microscopy (SEM). Nanosphere diameters are established from statistical analysis of SEM images. The optical properties, which are determined by the photonic band structure, are studied by means of light transmission and reflection measurements. There is a relationship between the wavelength position of transmittance minimum or reflectance maximum and the diameter of the nanospheres. The size of nanospheres obtained from optical measurement results were compared with data obtained from SEM images.}, keywords = {}, pubstate = {published}, tppubtype = {article} } All over the world the investigations of nanophotonic structures called photonic crystals (PCs) are performed. These crystals have potential applications in optoelectronics, e.g. optical filters, antireflective surface coatings, lossless frequency selective mirrors. In Institute of Physics at Silesian Technical University the opal photonic crystals consisting of monodisperse spherical particles, that have diameters of several hundred nanometers, are produced using colloidal self-assembly technics. The main aim of this work is the comparison between pieces of information on morphology of photonic crystals that can be obtained from electron microscopy and from the angular characteristics of optical transmittance and reflectance. The morphology of the samples is characterized by scanning electron microscopy (SEM). Nanosphere diameters are established from statistical analysis of SEM images. The optical properties, which are determined by the photonic band structure, are studied by means of light transmission and reflection measurements. There is a relationship between the wavelength position of transmittance minimum or reflectance maximum and the diameter of the nanospheres. The size of nanospheres obtained from optical measurement results were compared with data obtained from SEM images. |
2012 |
Starczewska, A; Nowak, M; Szperlich, P; Toroń, B; Mistewicz, K; Stróż, D; Szala, J Influence of humidity on impedance of SbSI gel Journal Article SENSORS AND ACTUATORS A-PHYSICAL, 183 , pp. 34-42, 2012, ISSN: 0924-4247. @article{ISI:000307032600006, title = {Influence of humidity on impedance of SbSI gel}, author = {A. Starczewska and M. Nowak and P. Szperlich and B. Toroń and K. Mistewicz and D. Stróż and J. Szala}, url = {http://www.sciencedirect.com/science/article/pii/S0924424712003809}, doi = {10.1016/j.sna.2012.06.009}, issn = {0924-4247}, year = {2012}, date = {2012-08-01}, journal = {SENSORS AND ACTUATORS A-PHYSICAL}, volume = {183}, pages = {34-42}, abstract = {This paper presents the effect of water vapor on the electrical response of antimony sulfoiodide (SbSI) nanowires obtained sonochemically to explore its application as a humidity sensor. For the first time this material has been studied using impedance spectroscopy. The measurements have been made in nitrogen for various humidities and temperatures. The real part of the total complex impedance is found to decrease by three orders of magnitude with the increase of humidity from 10% to 85%. Influence of temperature and humidity on relaxation time of SbSI is reported. The least square fitting of the Nyquist characteristics of the investigated gel allowed one to distinguish between different equivalent electric models of the SbSI gel. The changes of the parameters of the model with increasing temperature and humidity are presented. The polarization of water molecules is shown to be a major contributor to the capacitance-temperature characteristics of SbSI gel. (C) 2012 Elsevier B.V. All rights reserved.}, keywords = {}, pubstate = {published}, tppubtype = {article} } This paper presents the effect of water vapor on the electrical response of antimony sulfoiodide (SbSI) nanowires obtained sonochemically to explore its application as a humidity sensor. For the first time this material has been studied using impedance spectroscopy. The measurements have been made in nitrogen for various humidities and temperatures. The real part of the total complex impedance is found to decrease by three orders of magnitude with the increase of humidity from 10% to 85%. Influence of temperature and humidity on relaxation time of SbSI is reported. The least square fitting of the Nyquist characteristics of the investigated gel allowed one to distinguish between different equivalent electric models of the SbSI gel. The changes of the parameters of the model with increasing temperature and humidity are presented. The polarization of water molecules is shown to be a major contributor to the capacitance-temperature characteristics of SbSI gel. (C) 2012 Elsevier B.V. All rights reserved. |
2009 |
Starczewska, A; Wrzalik, R; Nowak, M; Szperlich, P; Jesionek, M; Moskal, G; Rzychoń, T; Szala, J; Stróż, D; Maślanka, P Influence of the solvent on ultrasonically produced SbSI nanowires Journal Article Ultrasonics Sonochemistry, 16 (4), pp. 537 - 545, 2009, ISSN: 1350-4177. @article{Starczewska2009537, title = {Influence of the solvent on ultrasonically produced SbSI nanowires}, author = {A. Starczewska and R. Wrzalik and M. Nowak and P. Szperlich and M. Jesionek and G. Moskal and T. Rzychoń and J. Szala and D. Stróż and P. Maślanka}, url = {http://www.sciencedirect.com/science/article/pii/S1350417708002241}, doi = {10.1016/j.ultsonch.2008.12.010}, issn = {1350-4177}, year = {2009}, date = {2009-01-01}, journal = {Ultrasonics Sonochemistry}, volume = {16}, number = {4}, pages = {537 - 545}, abstract = {The influence of the substitution of methanol in place of ethanol during the ultrasonic production of antimony sulfoiodide (SbSI) nanowires is presented. The new technology is faster and more efficient at temperatures greater than 314K. The products were characterized by using techniques such as powder X-ray diffraction (XRD), scanning electron microscopy (SEM), energy dispersive X-ray analysis (EDXA), high-resolution transmission electron microscopy (HRTEM), selected area electron diffraction (SAED), optical diffuse reflection spectroscopy (DRS) and IR spectroscopy. The coexistence of Pna21 (ferroelectric) and Pnam (paraelectric) phases at 298K was observed in the SbSI nanowires produced in methanol. The methanol decomposes during the sonication or due to the adsorption process on SbSI nanowires.}, keywords = {}, pubstate = {published}, tppubtype = {article} } The influence of the substitution of methanol in place of ethanol during the ultrasonic production of antimony sulfoiodide (SbSI) nanowires is presented. The new technology is faster and more efficient at temperatures greater than 314K. The products were characterized by using techniques such as powder X-ray diffraction (XRD), scanning electron microscopy (SEM), energy dispersive X-ray analysis (EDXA), high-resolution transmission electron microscopy (HRTEM), selected area electron diffraction (SAED), optical diffuse reflection spectroscopy (DRS) and IR spectroscopy. The coexistence of Pna21 (ferroelectric) and Pnam (paraelectric) phases at 298K was observed in the SbSI nanowires produced in methanol. The methanol decomposes during the sonication or due to the adsorption process on SbSI nanowires. |
2008 |
Starczewska, A; Wrzalik, R; Nowak, M; Szperlich, P; Bober, Ł; Szala, J; Stróż, D; Czechowicz, D Infrared spectroscopy of ferroelectric nanowires of antimony sulfoiodide Journal Article Infrared Physics & Technology, 51 (4), pp. 307 - 315, 2008, ISSN: 1350-4495. @article{Starczewska2008307, title = {Infrared spectroscopy of ferroelectric nanowires of antimony sulfoiodide}, author = {A. Starczewska and R. Wrzalik and M. Nowak and P. Szperlich and Ł. Bober and J. Szala and D. Stróż and D. Czechowicz}, url = {http://www.sciencedirect.com/science/article/pii/S1350449507000928}, doi = {http://dx.doi.org/10.1016/j.infrared.2007.09.004}, issn = {1350-4495}, year = {2008}, date = {2008-01-01}, journal = {Infrared Physics & Technology}, volume = {51}, number = {4}, pages = {307 - 315}, abstract = {For the first time the infrared absorbance of the ultrasonically fabricated nanowires of antimony sulfoiodide (SbSI) has been measured from 750 cm−1 to 4000−1 cm. The SEM and HRTEM investigations exhibit that the as-prepared SbSI ethanogel is made up of large quantity nanowires with diameters of about 10–50 nm and lengths reaching up to several μm and single-crystalline in nature. The IR measurements have been performed on as-prepared, dried and postannealed samples. The obtained results have been compared with the results of IR investigations of powdered single crystals of SbSI. One of the features of the sonochemically fabricated SbSI nanowires is the strong adsorption of ethanol, ethoxide species, ethylene and water.}, keywords = {}, pubstate = {published}, tppubtype = {article} } For the first time the infrared absorbance of the ultrasonically fabricated nanowires of antimony sulfoiodide (SbSI) has been measured from 750 cm−1 to 4000−1 cm. The SEM and HRTEM investigations exhibit that the as-prepared SbSI ethanogel is made up of large quantity nanowires with diameters of about 10–50 nm and lengths reaching up to several μm and single-crystalline in nature. The IR measurements have been performed on as-prepared, dried and postannealed samples. The obtained results have been compared with the results of IR investigations of powdered single crystals of SbSI. One of the features of the sonochemically fabricated SbSI nanowires is the strong adsorption of ethanol, ethoxide species, ethylene and water. |
2005 |
Nowak, M; Starczewska, A Steady-state photocarrier grating method of determining electronic states parameters in amorphous semiconductors Journal Article Journal of Non-Crystalline Solids, 351 (16–17), pp. 1383 - 1392, 2005, ISSN: 0022-3093. @article{Nowak20051383, title = {Steady-state photocarrier grating method of determining electronic states parameters in amorphous semiconductors}, author = {M. Nowak and A. Starczewska}, url = {http://www.sciencedirect.com/science/article/pii/S0022309305001705}, doi = {http://dx.doi.org/10.1016/j.jnoncrysol.2005.03.004}, issn = {0022-3093}, year = {2005}, date = {2005-01-01}, journal = {Journal of Non-Crystalline Solids}, volume = {351}, number = {16–17}, pages = {1383 - 1392}, abstract = {The steady-state photocarrier grating (SSPG) technique is usually used for determining the diffusion length of carriers in amorphous semiconductors. This technique uses the interference pattern obtained over an illuminated sample surface when two coherent radiation beams hit the sample at different angles of incidence. A figure of merit of these materials is a continuous distribution of electronic states over a so-called mobility gap. In the present paper the influence of an energetic distribution of electronic states on results of SSPG measurements is analyzed. Simultaneously, the influence of a spatial distribution of photogenerated carriers over semiconductor thickness is taken into account. Fitting of the angular dependence of the results of SSPG measurements with appropriate theoretical formulae allows the determination of energy levels and densities of acceptor and donor-like states in the investigated a-Si:H.}, keywords = {}, pubstate = {published}, tppubtype = {article} } The steady-state photocarrier grating (SSPG) technique is usually used for determining the diffusion length of carriers in amorphous semiconductors. This technique uses the interference pattern obtained over an illuminated sample surface when two coherent radiation beams hit the sample at different angles of incidence. A figure of merit of these materials is a continuous distribution of electronic states over a so-called mobility gap. In the present paper the influence of an energetic distribution of electronic states on results of SSPG measurements is analyzed. Simultaneously, the influence of a spatial distribution of photogenerated carriers over semiconductor thickness is taken into account. Fitting of the angular dependence of the results of SSPG measurements with appropriate theoretical formulae allows the determination of energy levels and densities of acceptor and donor-like states in the investigated a-Si:H. |
1999 |
Nowak, M; Starczewska, A Influence of spatial distribution of radiation on steady-state photocarrier grating measurement Journal Article Journal of Non-Crystalline Solids, 260 (1–2), pp. 41 - 53, 1999, ISSN: 0022-3093. @article{Nowak199941, title = {Influence of spatial distribution of radiation on steady-state photocarrier grating measurement}, author = {M. Nowak and A. Starczewska}, url = {http://www.sciencedirect.com/science/article/pii/S0022309399005591}, doi = {http://dx.doi.org/10.1016/S0022-3093(99)00559-1}, issn = {0022-3093}, year = {1999}, date = {1999-01-01}, journal = {Journal of Non-Crystalline Solids}, volume = {260}, number = {1–2}, pages = {41 - 53}, abstract = {The influence of spatial distribution of radiation intensity on results of steady-state photocarrier grating (SSPG) measurements is analyzed. This technique uses the interference pattern obtained over an illuminated sample surface when two coherent radiation beams hit the sample at different angles of incidence. The sample usually consists of a thin semiconductor film on a thick, parallel-sided substrate. In this paper, the interference of radiation internally reflected in the thin film as well as internally reflected in the substrate are taken into consideration. These phenomena evoke complicated spatial distributions of radiation in a sample, and consequently they affect the magnitude of photoconductivity. The value of SSPG response can be even a few times greater than the predicted one for a homogeneous distribution of light over the thickness of a semiconductor film. If one does not take this effect into account, the carrier diffusion lengths estimated with the SSPG technique may vary from those suggested by the measurement.}, keywords = {}, pubstate = {published}, tppubtype = {article} } The influence of spatial distribution of radiation intensity on results of steady-state photocarrier grating (SSPG) measurements is analyzed. This technique uses the interference pattern obtained over an illuminated sample surface when two coherent radiation beams hit the sample at different angles of incidence. The sample usually consists of a thin semiconductor film on a thick, parallel-sided substrate. In this paper, the interference of radiation internally reflected in the thin film as well as internally reflected in the substrate are taken into consideration. These phenomena evoke complicated spatial distributions of radiation in a sample, and consequently they affect the magnitude of photoconductivity. The value of SSPG response can be even a few times greater than the predicted one for a homogeneous distribution of light over the thickness of a semiconductor film. If one does not take this effect into account, the carrier diffusion lengths estimated with the SSPG technique may vary from those suggested by the measurement. |
