|
|
Stanowisko: adiunkt Telefon: +48 32 603 4153 Email: Bartlomiej.Toron@polsl.pl Adres: ul. Krasińskiego 8, p.267 PL-40-019 Katowice |
Zainteresowania naukowe:
- Hodowla monokryształów SbSI oraz SbSeI z fazy gazowej
- Badanie własności ferroelektrycznych i piezoelektrycznych materiałów
- Badania stałoprądowe, optyczne i fotoelektryczne materiałów
- Spektroskopia impedancji
- Emisja elektronów z ferroelektryków
- Laserowa obróbka nanomateriałów półprzewodnikowych
- Laserowe wytwarzanie heterostruktur SbSI/Sb2S3
- Wytwarzanie sonochemiczne i badanie nanomateriałów z grupy A15B16C17 oraz związków czteroskładnikowych A15 B1-x16 Cx16 D17
- Wytwarzanie i badanie nanokompozytów piezoelektrycznych
- Wytwarzanie i zastosowania nanogeneratorów piezo- i tryboelektrycznych
- Wytwarzanie i zastosowania piezoelektrycznych
Publikacje:
2019 |
Kozioł, M; Toroń, B; Szperlich, P; Jesionek, M Fabrication of a piezoelectric strain sensor based on SbSI nanowires as a structural element of a FRP laminate Journal Article Composites Part B: Engineering, 157 , pp. 58 - 65, 2019, ISSN: 1359-8368. @article{KOZIOL201958, title = {Fabrication of a piezoelectric strain sensor based on SbSI nanowires as a structural element of a FRP laminate}, author = {M. Kozioł and B. Toroń and P. Szperlich and M. Jesionek}, url = {http://www.sciencedirect.com/science/article/pii/S1359836818314276}, doi = {https://doi.org/10.1016/j.compositesb.2018.08.105}, issn = {1359-8368}, year = {2019}, date = {2019-01-01}, journal = {Composites Part B: Engineering}, volume = {157}, pages = {58 - 65}, abstract = {A research procedure involving the fabrication of deformation sensors integrated into a FRP (fiber reinforced polymer) laminate structure is presented in this manuscript. The sensors were made from a nanocomposite based on epoxy resin and antimony sulfur iodide (SbSI) nanowires. The nanocomposite was applied as an active layer, locally placed in the laminate structure. The piezoelectric performance of the sensors was evaluated by non-destructive bending tests. The obtained electrical characteristics showed that the sensor response allows us to determine both the deformation rate and the strain of the material. This gives a potential use for these types of sensors in structure monitoring systems. The presence of a sensor in the laminate's structure does not cause a significant decrease in the mechanical performance of the material.}, keywords = {}, pubstate = {published}, tppubtype = {article} } A research procedure involving the fabrication of deformation sensors integrated into a FRP (fiber reinforced polymer) laminate structure is presented in this manuscript. The sensors were made from a nanocomposite based on epoxy resin and antimony sulfur iodide (SbSI) nanowires. The nanocomposite was applied as an active layer, locally placed in the laminate structure. The piezoelectric performance of the sensors was evaluated by non-destructive bending tests. The obtained electrical characteristics showed that the sensor response allows us to determine both the deformation rate and the strain of the material. This gives a potential use for these types of sensors in structure monitoring systems. The presence of a sensor in the laminate's structure does not cause a significant decrease in the mechanical performance of the material. |
Jesionek, M; Toroń, B; Szperlich, P; Biniaś, W; Biniaś, D; Rabiej, S; Starczewska, A; Nowak, M; Kępińska, M; Dec, J Fabrication of a new PVDF/SbSI nanowire composite for smart wearable textile Journal Article Polymer, 180 , pp. 121729, 2019, ISSN: 0032-3861. @article{JESIONEK2019121729, title = {Fabrication of a new PVDF/SbSI nanowire composite for smart wearable textile}, author = {M. Jesionek and B. Toroń and P. Szperlich and W. Biniaś and D. Biniaś and S. Rabiej and A. Starczewska and M. Nowak and M. Kępińska and J. Dec}, url = {http://www.sciencedirect.com/science/article/pii/S0032386119307359}, doi = {https://doi.org/10.1016/j.polymer.2019.121729}, issn = {0032-3861}, year = {2019}, date = {2019-01-01}, journal = {Polymer}, volume = {180}, pages = {121729}, abstract = {In this paper, a new fabrication method for Polyvinylidene fluoride/SbSI nanowire composite is presented. Polyvinylidene fluoride (PVDF) is a specialist thermoplastic fluoropolymer with very good mechanical, chemical and thermal properties. Additionally, PVDF shows piezoelectric, pyroelectric, and ferroelectric properties. Antimony sulfoiodide (SbSI) nanowires (lateral dimensions of 10 nm–100 nm and lengths up to a few micrometres) are also piezoelectric compound with one of the best electromechanical and piezoelectric coefficient (k33 = 0.9 and dV = 0.9 × 10−9 C/N). SbSI nanowires have been added to improve piezoelectric properties of PVDF. The prepared SbSI nanowires were bound with PVDF in a mass ratio of 15:85, which was the fibre formation input with the addition of SbSI nanowires at different take-up velocities. An active layer of nanogenerator was prepared from the fabricated PVDF/SbSI nanowire composite. The preliminary investigations of compression and vibrations, allowed for the determination of the composites open circuit voltage 1.2 Vp-p and 2.5 Vp-p, respectively. Generated powers under impact have reached values PS = 408.8(52) μW/cm2 and PV = 3.464(53) mW/cm3, respectively.}, keywords = {}, pubstate = {published}, tppubtype = {article} } In this paper, a new fabrication method for Polyvinylidene fluoride/SbSI nanowire composite is presented. Polyvinylidene fluoride (PVDF) is a specialist thermoplastic fluoropolymer with very good mechanical, chemical and thermal properties. Additionally, PVDF shows piezoelectric, pyroelectric, and ferroelectric properties. Antimony sulfoiodide (SbSI) nanowires (lateral dimensions of 10 nm–100 nm and lengths up to a few micrometres) are also piezoelectric compound with one of the best electromechanical and piezoelectric coefficient (k33 = 0.9 and dV = 0.9 × 10−9 C/N). SbSI nanowires have been added to improve piezoelectric properties of PVDF. The prepared SbSI nanowires were bound with PVDF in a mass ratio of 15:85, which was the fibre formation input with the addition of SbSI nanowires at different take-up velocities. An active layer of nanogenerator was prepared from the fabricated PVDF/SbSI nanowire composite. The preliminary investigations of compression and vibrations, allowed for the determination of the composites open circuit voltage 1.2 Vp-p and 2.5 Vp-p, respectively. Generated powers under impact have reached values PS = 408.8(52) μW/cm2 and PV = 3.464(53) mW/cm3, respectively. |
2014 |
Jesionek, M; Nowak, M; Szperlich, P; Kępińska, M; Mistewicz, K; Toroń, B; Stróż, D; Szala, J; Rzychoń, T Properties of Sonochemically Prepared CuInxGa1-xS2 and CuInxGa1-xSe2 Journal Article Acta Physica Polonica A, 126 (5), pp. 1107 - 1109, 2014. @article{Jesionek2014, title = {Properties of Sonochemically Prepared CuInxGa1-xS2 and CuInxGa1-xSe2}, author = {M. Jesionek and M. Nowak and P. Szperlich and M. Kępińska and K. Mistewicz and B. Toroń and D. Stróż and J. Szala and T. Rzychoń }, url = {http://przyrbwn.icm.edu.pl/APP/PDF/126/a126z5p14.pdf}, doi = {10.12693/APhysPolA.126.1107}, year = {2014}, date = {2014-11-01}, journal = {Acta Physica Polonica A}, volume = {126}, number = {5}, pages = {1107 - 1109}, abstract = {Nanoparticles of chalcopyrites copper indium gallium sulfide (CuInxGa1-xS2 or CIGS) and copper indium gallium selenide (CuInxGa1-xSe2 or CIGSe) were fabricated sonochemically. They were characterized by X-ray diffraction, scanning electron microscopy, energy dispersive X-ray spectroscopy, high resolution transmission electron microscopy, selected area electron diffraction, and diffuse reflectance spectroscopy. The electrical and photoelectrical properties of the fabricated nanomaterials were investigated.}, keywords = {}, pubstate = {published}, tppubtype = {article} } Nanoparticles of chalcopyrites copper indium gallium sulfide (CuInxGa1-xS2 or CIGS) and copper indium gallium selenide (CuInxGa1-xSe2 or CIGSe) were fabricated sonochemically. They were characterized by X-ray diffraction, scanning electron microscopy, energy dispersive X-ray spectroscopy, high resolution transmission electron microscopy, selected area electron diffraction, and diffuse reflectance spectroscopy. The electrical and photoelectrical properties of the fabricated nanomaterials were investigated. |
Toroń, B; Nowak, M; Kępińska, M; Szperlich, P Mobility of Ferroelectric Domains in Antimony Sulfoiodide Journal Article ACTA PHYSICA POLONICA A, 126 (5), pp. 1093-1095, 2014, ISSN: 0587-4246, (43rd Jaszowiec International School and Conference on the Physics of Semiconductors, Wisla, POLAND, JUN 07-12, 2014). @article{ISI:000346069100011, title = {Mobility of Ferroelectric Domains in Antimony Sulfoiodide}, author = {B. Toroń and M. Nowak and M. Kępińska and P. Szperlich}, url = {http://przyrbwn.icm.edu.pl/APP/PDF/126/a126z5p10.pdf}, doi = {10.12693/APhysPolA.126.1093 }, issn = {0587-4246}, year = {2014}, date = {2014-11-01}, journal = {ACTA PHYSICA POLONICA A}, volume = {126}, number = {5}, pages = {1093-1095}, organization = {Polish Acad Sci, Inst Phys; Univ Warsaw, Fac Phys, Inst Expt Phys; Univ Warsaw, Fac Phys, Inst Theoret Phys; Polish Acad Sci, Inst High Pressure Phys; Wroclaw Univ Technol, Inst Phys; Inst Elect Technol; Polish Acad Sci, Comm Phys; Fdn Pro Physica; Minist Sci & Higher Educ; US Off Naval Res Global; US Army Technol Ctr Atlantic; Ap Vacuum; Bruker; Comef; Karia; Labis; Pfeiffer Vacuum; Nano Carbon}, abstract = {Different optical energy gaps in ferroelectric and paraelectric phases as well as light scattering on domain walls allow to observe ferroelectric domains in antimony sulfoiodide (SbSI) near the Curie temperature. Mobility 8.11(44) x 10(-8) m(2)/(V s) of ferroelectric domain walls under external electric field has been determined along c-axis of SbSI single crystals using optical transmittance microscopy.}, note = {43rd Jaszowiec International School and Conference on the Physics of Semiconductors, Wisla, POLAND, JUN 07-12, 2014}, keywords = {}, pubstate = {published}, tppubtype = {article} } Different optical energy gaps in ferroelectric and paraelectric phases as well as light scattering on domain walls allow to observe ferroelectric domains in antimony sulfoiodide (SbSI) near the Curie temperature. Mobility 8.11(44) x 10(-8) m(2)/(V s) of ferroelectric domain walls under external electric field has been determined along c-axis of SbSI single crystals using optical transmittance microscopy. |
Toroń, B; Nowak, M; Kępińska, M; Grabowski, A; Szala, J; Szperlich, P; Malka, I; Rzychoń, T A new heterostructures fabrication technique and properties of produced SbSI/Sb2S3 heterostructures Journal Article OPTICS AND LASERS IN ENGINEERING, 55 , pp. 232-236, 2014, ISSN: 0143-8166. @article{ISI:000331417300029, title = {A new heterostructures fabrication technique and properties of produced SbSI/Sb2S3 heterostructures}, author = {B. Toroń and M. Nowak and M. Kępińska and A. Grabowski and J. Szala and P. Szperlich and I. Malka and T. Rzychoń}, url = {http://www.sciencedirect.com/science/article/pii/S0143816613003473}, doi = {10.1016/j.optlaseng.2013.11.012}, issn = {0143-8166}, year = {2014}, date = {2014-04-01}, journal = {OPTICS AND LASERS IN ENGINEERING}, volume = {55}, pages = {232-236}, abstract = {A new technique for heterostructure fabrication in semiconducting compounds has been proposed. Heterojunctions have been made by applying CO2 laser beam. In contradistinction to currently applied methods (MBE - Molecular Beam Epitaxy and CVD - Chemical Vapor Deposition) the presented technique is simple, of low-cost and very efficient. The new technique has been tested on antimony sulfoiodide (SbSI) single crystals, i.e., a semiconducting, ferroelectric material characterized by many valuable properties. The most important structural, optical and electrical properties of the obtained heterostructures have been presented. Studies have shown that in the CO2 laser treated samples the junction exists between SbSI single crystal and amorphous phase of antimony sulfide (Sb2S3). At room temperature difference between energy gaps of both parts of SbSI/Sb2S3 heterostructure is equal to 0.3 eV. This leads to many interesting phenomena and potential applications. (C) 2013 Elsevier Ltd. All rights reserved.}, keywords = {}, pubstate = {published}, tppubtype = {article} } A new technique for heterostructure fabrication in semiconducting compounds has been proposed. Heterojunctions have been made by applying CO2 laser beam. In contradistinction to currently applied methods (MBE - Molecular Beam Epitaxy and CVD - Chemical Vapor Deposition) the presented technique is simple, of low-cost and very efficient. The new technique has been tested on antimony sulfoiodide (SbSI) single crystals, i.e., a semiconducting, ferroelectric material characterized by many valuable properties. The most important structural, optical and electrical properties of the obtained heterostructures have been presented. Studies have shown that in the CO2 laser treated samples the junction exists between SbSI single crystal and amorphous phase of antimony sulfide (Sb2S3). At room temperature difference between energy gaps of both parts of SbSI/Sb2S3 heterostructure is equal to 0.3 eV. This leads to many interesting phenomena and potential applications. (C) 2013 Elsevier Ltd. All rights reserved. |
Szperlich, P; Toroń, B; Nowak, M; Jesionek, M; Kępińska, M; Bogdanowicz, W Growth of large SbSI crystals Journal Article Materials Science-Poland, 32 (4), pp. 669-675, 2014, ISSN: 2083-1331. @article{, title = {Growth of large SbSI crystals}, author = {P. Szperlich and B. Toroń and M. Nowak and M. Jesionek and M. Kępińska and W. Bogdanowicz}, url = {http://dx.doi.org/10.2478/S13536-014-0247-4}, doi = {10.2478/S13536-014-0247-4}, issn = {2083-1331}, year = {2014}, date = {2014-01-01}, journal = {Materials Science-Poland}, volume = {32}, number = {4}, pages = {669-675}, publisher = {Versita}, abstract = {In this paper a novel method of SbSI single crystals fabrication is presented. In this method a sonochemically prepared SbSI gel is used as an intermediate product in a vapour growth process. The main advantages of the presented technique are as follows. First, the SbSI gel source material has lower temperature of sublimation and allows to avoid explosions during SbSI synthesis (the sonochemical synthesis is free of any explosion hazard). Second, but not least, the grown SbSI single crystals have smaller ratio of longitudinal and lateral dimensions. The cross sections of the presented crystals are relatively large (they are up to 9 mm2). The crystals have been characterized by X-ray diffraction, angle-resolved optical spectroscopy, and diffusive reflectivity.}, keywords = {}, pubstate = {published}, tppubtype = {article} } In this paper a novel method of SbSI single crystals fabrication is presented. In this method a sonochemically prepared SbSI gel is used as an intermediate product in a vapour growth process. The main advantages of the presented technique are as follows. First, the SbSI gel source material has lower temperature of sublimation and allows to avoid explosions during SbSI synthesis (the sonochemical synthesis is free of any explosion hazard). Second, but not least, the grown SbSI single crystals have smaller ratio of longitudinal and lateral dimensions. The cross sections of the presented crystals are relatively large (they are up to 9 mm2). The crystals have been characterized by X-ray diffraction, angle-resolved optical spectroscopy, and diffusive reflectivity. |
2013 |
Toroń, B; Nowak, M; Grabowski, A; Kępińska, M Electrical Properties of SbSI/Sb2S3 Single and Double Heterostructures Journal Article ACTA PHYSICA POLONICA A, 124 (5), pp. 830-832, 2013, ISSN: 0587-4246, (42nd Jaszowiec International School and Conference on the Physics of Semiconductors, Wisla, POLAND, JUN 22-27, 2013). @article{ISI:000328913500022, title = {Electrical Properties of SbSI/Sb2S3 Single and Double Heterostructures}, author = {B. Toroń and M. Nowak and A. Grabowski and M. Kępińska}, url = {http://przyrbwn.icm.edu.pl/APP/PDF/124/a124z5p21.pdf}, doi = {10.12693/APhysPolA.124.830 }, issn = {0587-4246}, year = {2013}, date = {2013-11-01}, journal = {ACTA PHYSICA POLONICA A}, volume = {124}, number = {5}, pages = {830-832}, organization = {Polish Acad Sci, Inst Phys; Univ Warsaw, Fac Phys, Inst Expt Phys; Univ Warsaw, Fac Phys, Inst Theoret Phys; Polish Acad Sci, Inst High Pressure Phys; Wroclaw Univ Technol; Inst Elect Technol; Polish Acad Sci, Comm Phys; Minist Sci & Higher Educ; Kronenberg Fdn Citi Handlowy; U S Army Forward Element Command Atlantic; European Reg Dev Fund Projects Nanobiom, MIME & IntechFun; PANalyt; Labis Oxford Instruments}, abstract = {The SbSI/Sb2S3 single heterostructures as well as Sb2S3/SbSI/Sb2S3 and SbSI/Sb2S3/SbSI double heterostructures have been produced by applying CO2 laser treatment of p-type SbSI single crystals. The current-voltage and transient characteristics of these heterostructures have been measured in temperatures below and above the SbSI single crystal Curie temperature (21 = 293 K). The results have been fitted with appropriate theoretical formulae to determine the following types of the investigated heterojunctions: P-p SbSI/Sb2S3, p-P-p Sb2S3/SbSI/Sb2S3 and P-p-P SbSI/Sb2S3/SbSI. Influence of the illumination on electrical properties of SbSI/Sb2S3 single and double heterostructures has been reported. Fabricated new structures may be potentially applicable in electronics and optoelectronics as a new type of metal-ferroelectric-semiconductor devices.}, note = {42nd Jaszowiec International School and Conference on the Physics of Semiconductors, Wisla, POLAND, JUN 22-27, 2013}, keywords = {}, pubstate = {published}, tppubtype = {article} } The SbSI/Sb2S3 single heterostructures as well as Sb2S3/SbSI/Sb2S3 and SbSI/Sb2S3/SbSI double heterostructures have been produced by applying CO2 laser treatment of p-type SbSI single crystals. The current-voltage and transient characteristics of these heterostructures have been measured in temperatures below and above the SbSI single crystal Curie temperature (21 = 293 K). The results have been fitted with appropriate theoretical formulae to determine the following types of the investigated heterojunctions: P-p SbSI/Sb2S3, p-P-p Sb2S3/SbSI/Sb2S3 and P-p-P SbSI/Sb2S3/SbSI. Influence of the illumination on electrical properties of SbSI/Sb2S3 single and double heterostructures has been reported. Fabricated new structures may be potentially applicable in electronics and optoelectronics as a new type of metal-ferroelectric-semiconductor devices. |
2012 |
Starczewska, A; Nowak, M; Szperlich, P; Toroń, B; Mistewicz, K; Stróż, D; Szala, J Influence of humidity on impedance of SbSI gel Journal Article SENSORS AND ACTUATORS A-PHYSICAL, 183 , pp. 34-42, 2012, ISSN: 0924-4247. @article{ISI:000307032600006, title = {Influence of humidity on impedance of SbSI gel}, author = {A. Starczewska and M. Nowak and P. Szperlich and B. Toroń and K. Mistewicz and D. Stróż and J. Szala}, url = {http://www.sciencedirect.com/science/article/pii/S0924424712003809}, doi = {10.1016/j.sna.2012.06.009}, issn = {0924-4247}, year = {2012}, date = {2012-08-01}, journal = {SENSORS AND ACTUATORS A-PHYSICAL}, volume = {183}, pages = {34-42}, abstract = {This paper presents the effect of water vapor on the electrical response of antimony sulfoiodide (SbSI) nanowires obtained sonochemically to explore its application as a humidity sensor. For the first time this material has been studied using impedance spectroscopy. The measurements have been made in nitrogen for various humidities and temperatures. The real part of the total complex impedance is found to decrease by three orders of magnitude with the increase of humidity from 10% to 85%. Influence of temperature and humidity on relaxation time of SbSI is reported. The least square fitting of the Nyquist characteristics of the investigated gel allowed one to distinguish between different equivalent electric models of the SbSI gel. The changes of the parameters of the model with increasing temperature and humidity are presented. The polarization of water molecules is shown to be a major contributor to the capacitance-temperature characteristics of SbSI gel. (C) 2012 Elsevier B.V. All rights reserved.}, keywords = {}, pubstate = {published}, tppubtype = {article} } This paper presents the effect of water vapor on the electrical response of antimony sulfoiodide (SbSI) nanowires obtained sonochemically to explore its application as a humidity sensor. For the first time this material has been studied using impedance spectroscopy. The measurements have been made in nitrogen for various humidities and temperatures. The real part of the total complex impedance is found to decrease by three orders of magnitude with the increase of humidity from 10% to 85%. Influence of temperature and humidity on relaxation time of SbSI is reported. The least square fitting of the Nyquist characteristics of the investigated gel allowed one to distinguish between different equivalent electric models of the SbSI gel. The changes of the parameters of the model with increasing temperature and humidity are presented. The polarization of water molecules is shown to be a major contributor to the capacitance-temperature characteristics of SbSI gel. (C) 2012 Elsevier B.V. All rights reserved. |
Toroń, B; Nowak, M; Grabowski, A; Kępińska, M; Szala, J; Rzychoń, T Optical properties of SbSI heterostructures Inproceedings Yin, S; Guo, R (Ed.): PHOTONIC FIBER AND CRYSTAL DEVICES: ADVANCES IN MATERIALS AND INNOVATIONS IN DEVICE APPLICATIONS VI, SPIE 2012, ISSN: 0277-786X, (Conference on Photonic Fiber and Crystal Devices - Advances in Materials and Innovations in Device Applications VI, San Diego, CA, AUG 12-13, 2012). @inproceedings{ISI:000312213900033, title = {Optical properties of SbSI heterostructures}, author = {B. Toroń and M. Nowak and A. Grabowski and M. Kępińska and J. Szala and T. Rzychoń}, editor = {Yin, S and Guo, R}, url = {http://www.sciencedirect.com/science/article/pii/S1350417709001709}, doi = {10.1117/12.978937}, issn = {0277-786X}, year = {2012}, date = {2012-01-01}, booktitle = {PHOTONIC FIBER AND CRYSTAL DEVICES: ADVANCES IN MATERIALS AND INNOVATIONS IN DEVICE APPLICATIONS VI}, volume = {8497}, organization = {SPIE}, series = {Proceedings of SPIE}, abstract = {The antimony sulfoiodide (SbSI) single crystal being a ferroelectric semiconductor has a large number of interesting properties. Based on SbSI single crystal a new type of heterostructures has been produced. For the first time diodes, transistors and thyristors composed of SbSI/Sb2S3 heterojunctions have been fabricated by CO2 laser irradiation of selected sections of SbSI single crystals. Treated sections are composed of amorphous antimony (III) sulphide (Sb2S3) with energy gap 0.3 eV smaller (in room temperature) than that of SbSI. The structural optical, electrical and photoelectrical characteristics of produced devices have been investigated.}, note = {Conference on Photonic Fiber and Crystal Devices - Advances in Materials and Innovations in Device Applications VI, San Diego, CA, AUG 12-13, 2012}, keywords = {}, pubstate = {published}, tppubtype = {inproceedings} } The antimony sulfoiodide (SbSI) single crystal being a ferroelectric semiconductor has a large number of interesting properties. Based on SbSI single crystal a new type of heterostructures has been produced. For the first time diodes, transistors and thyristors composed of SbSI/Sb2S3 heterojunctions have been fabricated by CO2 laser irradiation of selected sections of SbSI single crystals. Treated sections are composed of amorphous antimony (III) sulphide (Sb2S3) with energy gap 0.3 eV smaller (in room temperature) than that of SbSI. The structural optical, electrical and photoelectrical characteristics of produced devices have been investigated. |
2010 |
Nowak, M; Kauch, B; Szperlich, P; Stróż, D; Szala, J; Rzychoń, T; Bober, Ł; Toroń, B; Nowrot, A Sonochemical preparation of SbS1-xSexI nanowires Journal Article ULTRASONICS SONOCHEMISTRY, 17 (2), pp. 487-493, 2010, ISSN: 1350-4177. @article{ISI:000272919800036, title = {Sonochemical preparation of SbS1-xSexI nanowires}, author = {M. Nowak and B. Kauch and P. Szperlich and D. Stróż and J. Szala and T. Rzychoń and Ł. Bober and B. Toroń and A. Nowrot}, url = {http://www.sciencedirect.com/science/article/pii/S1350417709001709}, doi = {10.1016/j.ultsonch.2009.10.006}, issn = {1350-4177}, year = {2010}, date = {2010-02-01}, journal = {ULTRASONICS SONOCHEMISTRY}, volume = {17}, number = {2}, pages = {487-493}, abstract = {A sonochemical method for direct preparation of nanowires of SbS1-xSexI solid solution has been established. The SbS1-xSexI gel was synthesized using elemental Sb, S, Se and I in the presence of ethanol under ultrasonic irradiation (35 kHz, 2 W/cm(2)) at 50 degrees C for 2 h. The product was characterized by using techniques such as powder X-ray diffraction, scanning electron microscopy, high-resolution transmission electron microscopy, energy dispersive X-ray analysis, selected area electron diffraction, and optical diffuse reflection spectroscopy. The SEM and HRTEM investigations exhibit that the as-prepared samples are made up of large quantity nanowires with lateral dimensions of about 10-50 nm and lengths reaching up to several micrometers and single-crystalline in nature. The increase of molar composition of Se affects linear decrease of the indirect forbidden optical energy gap as well as the distance between (121) planes of the SbS1-xSexI nanowires. (C) 2009 Elsevier B.V. All rights reserved.}, keywords = {}, pubstate = {published}, tppubtype = {article} } A sonochemical method for direct preparation of nanowires of SbS1-xSexI solid solution has been established. The SbS1-xSexI gel was synthesized using elemental Sb, S, Se and I in the presence of ethanol under ultrasonic irradiation (35 kHz, 2 W/cm(2)) at 50 degrees C for 2 h. The product was characterized by using techniques such as powder X-ray diffraction, scanning electron microscopy, high-resolution transmission electron microscopy, energy dispersive X-ray analysis, selected area electron diffraction, and optical diffuse reflection spectroscopy. The SEM and HRTEM investigations exhibit that the as-prepared samples are made up of large quantity nanowires with lateral dimensions of about 10-50 nm and lengths reaching up to several micrometers and single-crystalline in nature. The increase of molar composition of Se affects linear decrease of the indirect forbidden optical energy gap as well as the distance between (121) planes of the SbS1-xSexI nanowires. (C) 2009 Elsevier B.V. All rights reserved. |
