@article{ISI:000331417300029,
title = {A new heterostructures fabrication technique and properties of produced SbSI/Sb2S3 heterostructures},
author = {B. Toroń and M. Nowak and M. Kępińska and A. Grabowski and J. Szala and P. Szperlich and I. Malka and T. Rzychoń},
url = {http://www.sciencedirect.com/science/article/pii/S0143816613003473},
doi = {10.1016/j.optlaseng.2013.11.012},
issn = {0143-8166},
year = {2014},
date = {2014-04-01},
journal = {OPTICS AND LASERS IN ENGINEERING},
volume = {55},
pages = {232-236},
abstract = {A new technique for heterostructure fabrication in semiconducting compounds has been proposed. Heterojunctions have been made by applying CO2 laser beam. In contradistinction to currently applied methods (MBE - Molecular Beam Epitaxy and CVD - Chemical Vapor Deposition) the presented technique is simple, of low-cost and very efficient. The new technique has been tested on antimony sulfoiodide (SbSI) single crystals, i.e., a semiconducting, ferroelectric material characterized by many valuable properties. The most important structural, optical and electrical properties of the obtained heterostructures have been presented. Studies have shown that in the CO2 laser treated samples the junction exists between SbSI single crystal and amorphous phase of antimony sulfide (Sb2S3). At room temperature difference between energy gaps of both parts of SbSI/Sb2S3 heterostructure is equal to 0.3 eV. This leads to many interesting phenomena and potential applications. (C) 2013 Elsevier Ltd. All rights reserved.},
keywords = {},
pubstate = {published},
tppubtype = {article}
}

@article{ISI:000328913500022,
title = {Electrical Properties of SbSI/Sb2S3 Single and Double Heterostructures},
author = {B. Toroń and M. Nowak and A. Grabowski and M. Kępińska},
url = {http://przyrbwn.icm.edu.pl/APP/PDF/124/a124z5p21.pdf},
doi = {10.12693/APhysPolA.124.830 },
issn = {0587-4246},
year = {2013},
date = {2013-11-01},
journal = {ACTA PHYSICA POLONICA A},
volume = {124},
number = {5},
pages = {830-832},
organization = {Polish Acad Sci, Inst Phys; Univ Warsaw, Fac Phys, Inst Expt Phys; Univ Warsaw, Fac Phys, Inst Theoret Phys; Polish Acad Sci, Inst High Pressure Phys; Wroclaw Univ Technol; Inst Elect Technol; Polish Acad Sci, Comm Phys; Minist Sci & Higher Educ; Kronenberg Fdn Citi Handlowy; U S Army Forward Element Command Atlantic; European Reg Dev Fund Projects Nanobiom, MIME & IntechFun; PANalyt; Labis Oxford Instruments},
abstract = {The SbSI/Sb2S3 single heterostructures as well as Sb2S3/SbSI/Sb2S3 and SbSI/Sb2S3/SbSI double heterostructures have been produced by applying CO2 laser treatment of p-type SbSI single crystals. The current-voltage and transient characteristics of these heterostructures have been measured in temperatures below and above the SbSI single crystal Curie temperature (21 = 293 K). The results have been fitted with appropriate theoretical formulae to determine the following types of the investigated heterojunctions: P-p SbSI/Sb2S3, p-P-p Sb2S3/SbSI/Sb2S3 and P-p-P SbSI/Sb2S3/SbSI. Influence of the illumination on electrical properties of SbSI/Sb2S3 single and double heterostructures has been reported. Fabricated new structures may be potentially applicable in electronics and optoelectronics as a new type of metal-ferroelectric-semiconductor devices.},
note = {42nd Jaszowiec International School and Conference on the Physics of Semiconductors, Wisla, POLAND, JUN 22-27, 2013},
keywords = {},
pubstate = {published},
tppubtype = {article}
}

@inproceedings{ISI:000312213900033,
title = {Optical properties of SbSI heterostructures},
author = {B. Toroń and M. Nowak and A. Grabowski and M. Kępińska and J. Szala and T. Rzychoń},
editor = {Yin, S and Guo, R},
url = {http://www.sciencedirect.com/science/article/pii/S1350417709001709},
doi = {10.1117/12.978937},
issn = {0277-786X},
year = {2012},
date = {2012-01-01},
booktitle = {PHOTONIC FIBER AND CRYSTAL DEVICES: ADVANCES IN MATERIALS AND INNOVATIONS IN DEVICE APPLICATIONS VI},
volume = {8497},
organization = {SPIE},
series = {Proceedings of SPIE},
abstract = {The antimony sulfoiodide (SbSI) single crystal being a ferroelectric semiconductor has a large number of interesting properties. Based on SbSI single crystal a new type of heterostructures has been produced. For the first time diodes, transistors and thyristors composed of SbSI/Sb2S3 heterojunctions have been fabricated by CO2 laser irradiation of selected sections of SbSI single crystals. Treated sections are composed of amorphous antimony (III) sulphide (Sb2S3) with energy gap 0.3 eV smaller (in room temperature) than that of SbSI. The structural optical, electrical and photoelectrical characteristics of produced devices have been investigated.},
note = {Conference on Photonic Fiber and Crystal Devices - Advances in Materials and Innovations in Device Applications VI, San Diego, CA, AUG 12-13, 2012},
keywords = {},
pubstate = {published},
tppubtype = {inproceedings}
}

@article{Nowak2009251,
title = {Using of textured polycrystalline SbSI in actuators},
author = {M. Nowak and P. Mroczek and P. Duka and A. Kidawa and P. Szperlich and A. Grabowski and J. Szala and G. Moskal},
url = {http://www.sciencedirect.com/science/article/pii/S0924424709000089},
doi = {http://dx.doi.org/10.1016/j.sna.2009.01.005},
issn = {0924-4247},
year = {2009},
date = {2009-01-01},
journal = {Sensors and Actuators A: Physical},
volume = {150},
number = {2},
pages = {251 - 256},
abstract = {This paper presents the design and fabrication of a light deflector made from textured polycrystalline antimony sulfoiodide (SbSI) obtained by gradient freezing during the rapid quenching from the liquid state. The piezoelectric and electrostriction parameters of the textured polycrystalline SbSI are evaluated from the reflection measurements. First time the electrostrictive constant of this material (4.6(1)x10^−13 m^2/V^2) is reported.},
keywords = {},
pubstate = {published},
tppubtype = {article}
}

@proceeding{doi:10.1117/12.726548,
title = {Laser cutting of AlSi-alloy/SiCp composite: modelling of the cut kerf geometry},
author = {A. Grabowski and J. Sleziona and M. Nowak},
url = {http://dx.doi.org/10.1117/12.726548},
doi = {10.1117/12.726548},
year = {2006},
date = {2006-01-01},
journal = {Proc. SPIE},
volume = {6598},
pages = {65980H-65980H-5},
abstract = {This paper presents a physical model characterizing the geometry of gas-assisted laser cutting of the AlSi-alloy/SiCp composite. In the model, a lot of relevant parameters that describe the inhomogeneous optical and thermophysical properties of AlSi-alloy/SiCp have been used. Numerical evaluations of this model give some explanations of "double slope" formation mechanism during laser cutting of the AlSi-alloy/SiCp. The theoretical results are compared with experimental data. It is found that increasing laser beam scanning speed increases the slope of cutting front.},
keywords = {},
pubstate = {published},
tppubtype = {proceeding}
}

@article{Grabowski2005233,
title = {Optical and conductive properties of AlSi-alloy/SiCp composites: application in modelling CO2 laser processing of composites},
author = {A. Grabowski and M. Nowak and J. Śleziona},
url = {http://www.sciencedirect.com/science/article/pii/S0143816604001319},
doi = {http://dx.doi.org/10.1016/j.optlaseng.2004.06.010},
issn = {0143-8166},
year = {2005},
date = {2005-01-01},
journal = {Optics and Lasers in Engineering},
volume = {43},
number = {2},
pages = {233 - 246},
abstract = {The optical properties—reflectivity, real part of the refractive index, absorption coefficient as well as the thermal and electrical conductivity of AlSi-alloy/SiCp composite were measured. The optical parameters and both conductivities decreased with the increase of SiCp particles volume in AlSi-alloy matrix. This decrease was almost linear for the volume fraction of SiCp particle up to 10 vol% of the total mass of the composite. For the 15 vol% of SiCp particles, the departure from linearity is connected with the presence of additional phases in AlSi-alloy/SiCp composite materials. The measured temperature dependencies of optical reflectivity and electrical conductivity for AlSi-alloy/SiCp 15 vol% are of metallic character. Modelling of the interaction of the CO2 laser radiation with AlSi-alloy/SiCp 15 vol% composite should allow to estimate the initiation time at which the surface composite reaches melting temperature.},
keywords = {},
pubstate = {published},
tppubtype = {article}
}

@article{doi:10.1117/12.405973,
title = {Modification of the optical and electronics parameters in a-Si:H as a result of annealing with CO2 laser radiation},
author = {A. Grabowski and M. Nowak},
url = {http://dx.doi.org/10.1117/12.405973},
doi = {10.1117/12.405973},
year = {2000},
date = {2000-01-01},
journal = {Proc. SPIE},
volume = {4238},
pages = {174-179},
abstract = {Thin film of hydrogenated amorphous silicon (a-Si:H) were annealed using CO2 laser radiation ((lambda) equals10,6 micrometers ). The influence of this laser treatment on spectral dependencies of real part of refractive index and absorption coefficient of light in a-Si:H are presented. The values of energy gap have decreased while the Urbach energy increased after CO2 laser annealing of a-Si:H. The conductivity and photoconductivity of the annealed material have decreased. The power coefficient of the light intensity dependence of photoconductivity has also changed. The influence of CO2 laser irradiation on the energetic distribution of electron states of a a-Si:H is reported.},
keywords = {},
pubstate = {published},
tppubtype = {article}
}

@article{Grabowski1998183,
title = {Angular distribution of intensity of reflected radiation investigations of the influence of CO2 laser treatment on optical properties of hydrogenated amorphous silicon},
author = {A. Grabowski and J. Jaglarz and M. Nowak},
url = {http://www.sciencedirect.com/science/article/pii/S0030399298000310},
doi = {http://dx.doi.org/10.1016/S0030-3992(98)00031-0},
issn = {0030-3992},
year = {1998},
date = {1998-01-01},
journal = {Optics & Laser Technology},
volume = {30},
number = {3–4},
pages = {183 - 187},
abstract = {Thin films of hydrogenated amorphous silicon (a-Si:H) were annealed using CO2 laser radiation (λ=10.6 μm). Changes of optical properties of the treated a-Si:H were investigated using optical transmittance spectroscopy and the angular distribution of intensity of reflected radiation (ADIRR). The CO2 laser annealing influences the spectral characteristics of the real part of refractive index n and absorption coefficient α of light in a-Si:H. This treatment increases the n and α values as well as the Urbach energy of a-Si:H. Simultaneously it decreases the optical energy gap of this material. The changes of optical parameters at the interfaces of a-Si:H–glass substrate and a-Si:H–air were established.},
keywords = {},
pubstate = {published},
tppubtype = {article}
}

@article{Grabowski199675,
title = {Determination of recombination and photogeneration parameters of a-Si:H using photoconductivity measurements},
author = {A. Grabowski and M. Nowak and P. Tzanetakis},
url = {http://www.sciencedirect.com/science/article/pii/0040609095085580},
doi = {http://dx.doi.org/10.1016/0040-6090(95)08558-0},
issn = {0040-6090},
year = {1996},
date = {1996-01-01},
journal = {Thin Solid Films},
volume = {283},
number = {1–2},
pages = {75 - 80},
abstract = {The non-linear dependence of photoconductivity (PC) on wavelength and intensity of illumination was used to evaluate the lifetime and quantum efficiency coefficient of carrier photogeneration in RF sputtered thin films of a-Si:H. The change of spatial distribution of radiation intensity over the sample thickness with the change of photon energy has been taken into account. Due to this, for the photon energies greater than the semiconductor energy gap, the decay of PC with an increase of absorption coefficient of radiation could be described using only one recombination parameter: the lifetime factor proportional to carrier lifetime. The comparison of the values of absorption coefficient obtained from the measurements of optical transmittance, CPM and the quantum efficiency coefficient is presented. The determination of carrier lifetime as a function of energy of photons that generate the free carriers is discussed.},
keywords = {},
pubstate = {published},
tppubtype = {article}
}